Abstract: The invention relates to a method for etching of silicon surfaces with the following steps: Furnishing an aqueous alkaline hydrocolloid etching solution containing at least one hydrocolloid, at a temperature of 50° C. to 95° C., bringing the silicon surface in contact with the hydrocolloid etching solution for a specified duration, and Removing the hydrocolloid etching solution from the silicon surface.

Abstract: The present invention is directed to a device for retaining substrates (S), such as wafers or silicon substrates for the production of photovoltaic elements. The device includes opposing walls (1) that are interconnected by at least two rod-like carrier elements (2, 3) that are provided with a retaining means (5) for retaining the substrates (S) in a vertical position oriented parallel to the walls (1). At least one rod-like counter carrier element (4) is also provided and interconnects the two walls (1). The counter carrier element (4) is positioned in relation to the carrier elements (2, 3) so that vertical movement of the substrates (S) relative to the walls (1) is limited and loading or unloading of the substrates (S) is possible at a slant in relation to the vertical direction (V).

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Abstract: The present invention is directed to a device for retaining substrates (S), such as wafers or silicon substrates for the production of photovoltaic elements. The device includes opposing walls (1) that are interconnected by at least two rod-like carrier elements (2, 3) that are provided with a retaining means (5) for retaining the substrates (S) in a vertical position oriented parallel to the walls (1). At least one rod-like counter carrier element (4) is also provided and interconnects the two walls (1). The counter carrier element (4) is positioned in relation to the carrier elements (2, 3) so that vertical movement of the substrates (S) relative to the walls (1) is limited and loading or unloading of the substrates (S) is possible at a slant in relation to the vertical direction (V).

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Abstract: An apparatus for generating ozone with at least one ceramic tube forming a dielectric, a discharge electrode associated with the ceramic tube and connected to a high voltage supply and a counter-electrode is proposed, in which the at least one ceramic tube is cooled by a coolant and an oxygen-containing gas is passed into the vicinity of the discharge tube. The at least one ceramic tube (1) is inserted in a ceramic moulding (2) by means of oxidic glass or ceramic solders and an encasing tube (6) embraces the at least one ceramic tube (1) and is sealed against the ceramic mouldings (2).

Abstract: An apparatus for producing ozone from oxygen includes at least one discharge electrode and counterelectrode which are separated by a dielectric of high heat conductivity and tightly bear on the dielectric that is cooled in a direct manner. The discharge electrode, around which oxygen flows, forms a non-closed surface and is in the form of a wire. By applying an electric field, the discharge electrode triggers a discharge in the gas space surrounding the discharge electrode and on the dielectric. The discharge electrode is made of molybdenum, tungsten, niobium or tantalum and is directly exposed to the oxygen flow.