Patents by Inventor Jurgen Thomas Rickes

Jurgen Thomas Rickes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6807080
    Abstract: A memory with mechanisms for enhancing storage states without boosting voltages to levels that damage storage cell structures. A storage cell according to the present teachings includes a storage structure capable of switching storage states. A memory according to the present teachings includes means for writing the storage cell by applying a first voltage to a first node of the storage structure and for applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: October 19, 2004
    Assignees: Agilent Technologies, Inc., Texas Instrument, Inc.
    Inventors: Jurgen Thomas Rickes, Hugh Pryor McAdams, Scott Robert Summerfelt
  • Patent number: 6657881
    Abstract: A memory which is capable of reconfiguration between a first mode in which each storage cell is capable of storing a pair of data bits and a second mode in which each storage cell is capable of storing a single data. A memory according to the present teachings includes a storage cell having a first structure and a second structure each capable of a storage state and mechanisms for reconfiguring the memory between a first mode in which the storage states of the first and second structures indicate a first and a second data bit, respectively, and a second mode in which the storage states combine to indicate a data bit.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: December 2, 2003
    Assignees: Agilent Technologies, Inc., Texas Instruments, Inc.
    Inventors: Jurgen Thomas Rickes, Ralph Hurley Raymer Lanham
  • Publication number: 20030214829
    Abstract: A memory which is capable of reconfiguration between a first mode in which each storage cell is capable of storing a pair of data bits and a second mode in which each storage cell is capable of storing a single data. A memory according to the present teachings includes a storage cell having a first structure and a second structure each capable of a storage state and mechanisms for reconfiguring the memory between a first mode in which the storage states of the first and second structures indicate a first and a second data bit, respectively, and a second mode in which the storage states combine to indicate a data bit.
    Type: Application
    Filed: May 17, 2002
    Publication date: November 20, 2003
    Inventors: Jurgen Thomas Rickes, Ralph Hurley Raymer Lanham
  • Publication number: 20030214830
    Abstract: A memory with mechanisms for enhancing storage states without boosting voltages to levels that damage storage cell structures. A storage cell according to the present teachings includes a storage structure capable of switching storage states. A memory according to the present teachings includes means for writing the storage cell by applying a first voltage to a first node of the storage structure and for applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities.
    Type: Application
    Filed: May 17, 2002
    Publication date: November 20, 2003
    Inventors: Jurgen Thomas Rickes, Hugh Pryor McAdams, Scott Robert Summerfelt