Patents by Inventor Juro Inomata

Juro Inomata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Character recognition method
    Patent number: 5109432
    Abstract: A character recognition method includes steps of comparing input image data with character patterns of a predetermined dictionary and recognizing a character indicated by the input image data without requiring any special hardware in a conventional character recognition apparatus. Namely, the input image data is processed by using an unwanted-dot elimination mask and processed by using a positive mask and negative mask of each of the character patterns in the dictionary, and then a discrepancy ratio of each of the character patterns is calculated. Consequently, highly accurate character recognition can be carried out at a low cost without using special hardware, by decreasing the negative infludence of a flaw, a missing portion, dust, and the like.
    Type: Grant
    Filed: December 27, 1989
    Date of Patent: April 28, 1992
    Assignees: Fujitsu Limited, Fujitsu Tohoku Electronics, Honda Electron Co., Ltd.
    Inventors: Hitoshi Hori, Akihiro Endo, Kuninori Takahashi, Juro Inomata
  • Method and device for analyzing gas in process chamber
    Patent number: 5093571
    Abstract: A gas in a process chamber, such as a sputtering chamber, having a typical inside pressure of 10.sup.-1 to 10.sup.-3 Torr, is analyzed by a mass spectrometer, which should be used at a pressure range of lower than around 10.sup.-4 Torr. The method comprises evacuating a process chamber by a vacuum pump and supplying a gas to the process chamber, whereby a pressure in the process chamber is determined by the vacuum pump and the supplied gas, and that pressure in the process chamber is higher than a pressure in the vacuum pump, and analyzing the gas at a portion of or around the vacuum pump, which portion has a pressure lower than the pressure in the process chamber, by using a mass spectrometer.
    Type: Grant
    Filed: July 2, 1990
    Date of Patent: March 3, 1992
    Assignee: Fujitsu Limited
    Inventors: Juro Inomata, Masaru Nakamura
  • Semiconductor device and method for producing same
    Patent number: 4426657
    Abstract: A semiconductor device having a protective polyimide film layer for preventing .alpha.-rays from intruding into the device is provided. The polyimide film layer has incorporated therein a salient amount of finely divided filler particles, and is formed on the surface of at least a region wherein the semiconductor element is formed. The polyimide film layer is formed by coating the semiconductor substrate with a liquid polyimide or polyamic acid composition having incorporated therein the finely divided filler particles, according to a screen printing method.
    Type: Grant
    Filed: February 13, 1981
    Date of Patent: January 17, 1984
    Assignee: Fujitsu Limited
    Inventors: Akira Abiru, Masahiro Sugimoto, Juro Inomata