Abstract: The invention relates to semiconductor electronics and can be used for producing high-efficient broad-band electromagnetic radiation converters for directly converting incident radiation into electromotive force in both, the optically visible and optically invisible ranges. The inventive electromagnetic radiation converter comprises a semiconductor substrate with N=1 discrete local domains of a first conductivity type formed thereon, and since said substrate is of a second conductivity type, the above-mentioned domains of a first conductivity type form together with the substrate N=1 p-n junctions combined into a current node. Furthermore, isotype junctions generating repulsive isotype barriers to the minority charge carriers are formed on the face side of the substrate beyond the domains of a first conductivity type.

Abstract: The invention relates to electromagnetic radiation converters. In a first embodiment, the inventive converter comprises at least one collecting region of a first conductivity type, at least one collecting region of a second conductivity type and first and second current-collecting conducting electrodes. On a first, second conductivity type substrate side sensitive to the incident electromagnetic radiation, N>1 first conductivity type regions are provided, each of which spaced apart at a distance of F<2f from other regions of the same conductivity type, where f is a quantity commensurable with or equal to the diffusion length of non-equilibrium minority charge carriers. In a second embodiment, the inventive converter comprises at least one collecting region of a first conductivity type, at least one collecting region of a second conductivity type and first and second current-collecting conducting electrodes.