Patents by Inventor Jury Petrovich Maslakovets, deceased

Jury Petrovich Maslakovets, deceased has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor SiCl light source and a method of manufacturing same
    Patent number: 3986193
    Abstract: A semiconductor light source using nitrogen-doped n-type silicon carbide with a p-n junction electroluminescent within the visible region of the spectrum, and with a p-layer doped with an acceptor impurity, wherein the uncompensated majority donor concentration in said silicon carbide is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3, the p-layer is doped with an acceptor impurity with a minimum activation energy and with a solubility in silicon carbide of about 10.sup.19 to 10.sup.20 cm.sup..sup.-3, the uncompensated donor concentration in the base layer is 0.8 .times. 10.sup.18 to 5 .times. 10.sup.18 cm.sup..sup.-3 and a central layer, 0.05 to 1 micron thick, located between the p-layer and the base layer is doped with luminescence activators of donor and acceptor types to a concentration of 0.1 .times. 10.sup.18 to 2 .times. 10.sup.18 cm.sup..sup.-3 and has a resistivity greater than the resistivity of the base layer by at least three orders of magnitude.
    Type: Grant
    Filed: June 13, 1975
    Date of Patent: October 12, 1976
    Inventors: Jury Alexandrovich Vodakov, Galina Alexandrovna Lomakina, Evgeny Nikolaevich Mokhov, Igor Ivanovich Kruglov, Igor Veniaminovich Ryzhikov, Vadim Ivanovich Pavlichenko, Tatyana Georgievna Kmita, Georgy Fedorovich Kholuyanov, Eduard Efimovich Violin, Jury Petrovich Maslakovets, deceased, by Irina Vladimirovna Valter-Maslakovets, administratrix