Abstract: Disclosure is made of a method for producing a semiconductor array of light-emitting elements, whereby a mask is first applied onto an n-layer of an epitaxial structure consisting of a substrate GaAs of the p.sup.+ -type of conductivity with layers Ga.sub.1-x AlxAs of the p-type and Ga.sub.1-y AlyAs of the n-type applied successively onto it, which layers form a light-emitting p-n junction. The mask is produced by applying a photoresist layer onto the n-layer with subsequent exposure and etching. This is followed by introducing into the n-type layer, through said mask, an acceptor addition by means of ion implantation. After this the photoresist layer is removed, and a layer of SiO.sub.2 is applied onto the uncovered n-layer. After this diffusion heat treatment is carried out for a time and at a temperature sufficient to produce in the n-layer regions of the p-type of conductivity whose depth is at least equal to the thickness of the n-layer.