Abstract: Provided is a substrate processing method using a PEALD method in which an amorphous TiN film is formed on the substrate. The substrate processing method comprises providing the substrate to a reaction chamber, supplying a first gas to the reaction chamber, supplying a second gas to the reaction chamber, and applying a power to the reaction chamber, wherein a frequency of the power is a variable frequency, wherein the second gas is activated by the power.

Abstract: Provided is a method of forming a TiN spacer film on the patterned structure comprising a step of loading a substrate onto a chamber, a step of forming a film on the substrate; a step of post treatment to the film; and a step of unloading the substrate, wherein the step of forming the film on the substrate comprises supplying a first gas and a second gas sequentially and alternately, wherein the step of post treating to the film comprises supplying treatment gas to the substrate, wherein the second gas and the treatment gas are activated by RF power.