Abstract: An electronic luminscence unit includes a substrate, a plurality of electronic luminscence unit and a transparent plate. Each electronic luminscence unit is arranged on the substrate. Each electronic luminscence unit has a circle as a grounding end. The portions near the grounding end are circlarly installed with a red light portion (R), a green light portion (G), and a blue light portion (B) with a ratio of 1:2:7, respectively and a space is formed therebetween. The light portions of the grounding end are connected to a driving device for boosting the input voltage and doubling the frequency to the electronic luminscence unit so as to achieve a required illumination and acquire a desired light color. The transparent plate is installed above the substrate. A transmitting hole with an elliptic shape or a taper shape is installed on the electronic luminscence unit so that the light from the electronic luminscence unit can be projected out from the respective transmitting hole and then mixed.

Abstract: The amorphous and polycrystalline structures of a GaN-based semiconductor are grown on the surface of a compound semiconductor layer showing by formation of InxAlyGa(1−x−y)N(0≦(x,y)≦1.0000, and (x+y)≦1.0000). More specified from others, different kinds of the amorphous and polycrystalline structures of the InAlGaN based compound semiconductor layers grown on the surface of the InAlGaN based compound semiconductor can be functionally well significantly, and can be applied together or individually in different band-gap designs for different compound semiconductors.