Patents by Inventor Ju Song EOM

Ju Song EOM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10032797
    Abstract: Disclosed are an oxide semiconductor-based transistor and a method of manufacturing the same. The oxide semiconductor-based transistor includes: a substrate provided with a bottom electrode; an insulator layer formed on the substrate; an active layer formed on the insulator layer; an electron transport layer formed on the active layer; and a top electrode formed on the electron transport layer. Since the oxide semiconductor-based transistor has a hybrid channel of PBD formed along with indium-zinc oxide (IZO), it is possible to improve mobility of electric charges and stability of electric devices and control a threshold value.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: July 24, 2018
    Assignee: CHUNGBUK NATIONAL UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
    Inventors: Sung Jin Kim, Ju Song Eom
  • Publication number: 20170294455
    Abstract: Disclosed are an oxide semiconductor-based transistor and a method of manufacturing the same. The oxide semiconductor-based transistor includes: a substrate provided with a bottom electrode; an insulator layer formed on the substrate; an active layer formed on the insulator layer; an electron transport layer formed on the active layer; and a top electrode formed on the electron transport layer. Since the oxide semiconductor-based transistor has a hybrid channel of PBD formed along with indium-zinc oxide (IZO), it is possible to improve mobility of electric charges and stability of electric devices and control a threshold value.
    Type: Application
    Filed: November 1, 2016
    Publication date: October 12, 2017
    Inventors: Sung Jin KIM, Ju Song EOM