Patents by Inventor Justin F. Gaynor
Justin F. Gaynor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8034638Abstract: The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing an IC fabrication process on a wafer on which a low-k film is deposited, and subsequently treating the film with a silylating agent to repair the damage done to the film during the process. Damage repair may be performed after one or more of the damaging process steps.Type: GrantFiled: May 7, 2009Date of Patent: October 11, 2011Assignee: Novellus Systems, Inc.Inventors: Bart J. Schravendijk, Justin F. Gaynor
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Patent number: 7541200Abstract: The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing an IC fabrication process on a wafer on which a low-k film is deposited, and subsequently treating the film with a silylating agent to repair the damage done to the film during the process. Damage repair may be performed after one or more of the damaging process steps.Type: GrantFiled: June 27, 2006Date of Patent: June 2, 2009Assignee: Novellus Systems, Inc.Inventors: Bart J. van Schravendijk, Justin F. Gaynor
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Patent number: 7361599Abstract: A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.Type: GrantFiled: June 6, 2005Date of Patent: April 22, 2008Assignee: Texas Instruments IncorporatedInventors: Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin F. Gaynor, Stephen R. Gilbert, Francis Celii, Scott R. Summerfelt, Luigi Colombo
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Patent number: 7083991Abstract: Method and apparatus for using a silylating agent after exposure to an oxidizing environment for repairing damage to low-k dielectric films are described. Plasma photoresist removal, or ashing, may damage bonds in the low-k materials, which may lead to a significant increase in the dielectric constant of the materials. The silylating agent may be used to repair damage to the low-k films after the ashing process. Additionally, a curing process using an oxidizing environment may damage bonds in low-k materials, which may subsequently be repaired by a silylating process. The described method and apparatus may be used with low-k dielectric films including hydrophobic porous oxide films. A chamber for processing a wafer in an oxidizing environment and subsequently performing a silylation process includes an oxidizing agent inlet and a silylating agent inlet.Type: GrantFiled: February 24, 2005Date of Patent: August 1, 2006Assignee: Novellus Systems, Inc.Inventor: Justin F. Gaynor
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Patent number: 6902939Abstract: A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.Type: GrantFiled: August 19, 2002Date of Patent: June 7, 2005Assignee: Texas Instruments IncorporatedInventors: Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin F. Gaynor, Stephen R. Gilbert, Francis Celii, Scott R. Summerfelt, Luigi Colombo
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Patent number: 6873026Abstract: A composition comprises a first component that provides a predetermined response to radiation, and a second component. Upon curing of the composition, portions of the first component bind together portions of the second component to form an inhomogeneous material having physical properties substantially determined by the second component. The function provided by the first component's response to radiation and the macroscopic properties determined by the second component are largely decoupled and thus may be separately optimized. Some embodiments provide photo-patternable low dielectric constant materials that may be advantageously employed in metal interconnect layers in integrated circuits, for example.Type: GrantFiled: March 4, 2002Date of Patent: March 29, 2005Assignee: Novellus Systems, Inc.Inventors: Paul E. Brunemeier, Archita Sengupta, Justin F. Gaynor, Robert H. Havemann
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Patent number: 6827982Abstract: The adhesion of overlying layers to a silicalite-plus-binder dielectric layer is enhanced by forming a layer that includes the binder in a higher concentration. The overlying layer, e.g., silicon dioxide, silicon carbide or silicon nitride, adheres more tightly to the higher-concentration binder layer. Although the presence of the higher-concentration binder layer may increase the dielectric constant of the overall silicalite-plus-binder stack, the increase is generally minimal.Type: GrantFiled: April 30, 2002Date of Patent: December 7, 2004Assignee: Novellus Systems, Inc.Inventors: Judy Huang, Justin F. Gaynor, Archita Sengupta
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Patent number: 6706623Abstract: An electronic device and method of construction are disclosed that provide for a dielectric layer (12) having a low dielectric constant. A conductive sheath layer (18) is disposed adjacent to the dielectric layer (12). The conductive sheath layer (18) is operable to electrically divert etchant particles used in a plasma etch process away from the dielectric layer (12). In another embodiment of the disclosed invention, a method is provided which comprises covering an inner layer (40) with a layer of dielectric material (42). The method also comprises depositing a conductive sheath layer (48) outwardly from the layer of dielectric material (42). A photoresist layer (50) is then deposited outwardly from the conductive sheath layer (48). The photoresist layer (50) is then patterned resulting in a patterned mask composed of portions of the photoresist layer (50) disposed outwardly from the conductive sheath layer (48).Type: GrantFiled: July 1, 1999Date of Patent: March 16, 2004Assignee: Texas Instruments IncorporatedInventor: Justin F. Gaynor
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Patent number: 6660245Abstract: Structure-directing agents, such as quaternary ammonium, are removed from silicalite or zeolite crystals by oxidative attack (e.g., using CO2, H2O or NH3) first, by using a combination of ammonia, water and hydrogen peroxide at an elevated temperature; second, by using choline, hydrogen peroxide and a surfactant; third, by using ozonated water; and fourth, by exposing the crystals to an oxygen-containing plasma. Thin porous films of silicalite or zeolite crystals are useful, for example, in forming low dielectric constant insulating layers in semiconductor chip fabrication. In order for the silicalite or zeolite crystals to form a low dielectric constant film, however, the entrained molecules of the structure-directing agent must be removed.Type: GrantFiled: January 11, 2002Date of Patent: December 9, 2003Assignee: Novellus Systems, Inc.Inventors: Justin F. Gaynor, Patrick Vancleemput
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Patent number: 6566243Abstract: A two-component porous material including small silicalite crystals in a porous binder provides a low dielectric constant material useful as an insulating layer in microelectronic devices. The silicalite/binder porous material uses silicalite nanocrystals smaller than the characteristic dimensions of the features on the integrated circuit device. The binder is an amorphous porous material that links the silicalite nanocrystals together, formed from a precursor which polymerizes on heating. The silicalite nanocrystals are supplied as a colloidal suspension or slurry. The slurry and binder precursor are spincoated onto a substrate and thermally treated to polymerize the binder precursor and drive off solvent in the slurry, forming the porous silicalite/binder material. The silicalite/binder porous material is readily integrated into standard damascene fabrication processes.Type: GrantFiled: October 9, 2001Date of Patent: May 20, 2003Assignee: Novellus Systems, Inc.Inventor: Justin F. Gaynor
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Publication number: 20030068846Abstract: A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.Type: ApplicationFiled: August 19, 2002Publication date: April 10, 2003Inventors: Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin F. Gaynor, Stephen R. Gilbert, Francis Celii, Scott R. Summerfelt, Luigi Colombo
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Patent number: 6533855Abstract: The present invention relates to chemical modifications of the surfaces of silicalite and high-silica zeolite nanoparticles permitting such particles to be dispersed in nonpolar hydrophobic solvents, and to the dispersions so produced and to interlayer dielectric layers, molecular sieve membranes and/or catalytic membranes formed from such dispersions, and to the fabrication of integrated circuits in the case of interlayer dielectric layers. A dispersion of silicalite or high-silica zeolite nanoparticles is formed in alkaline aqueous solution. The pH of the solution is reduced by multiple rinsing with deionized water to approximately pH of 9 or 10. The solution is then rendered acidic, typically pH between 2 and 3, by the addition of a suitable acid. The acidic solution is gradually intermixed with an alcohol under conditions of elevated temperature and/or reduced pressure to enhance the solvent evaporation rate.Type: GrantFiled: February 13, 2001Date of Patent: March 18, 2003Assignee: Novellus Systems, Inc.Inventors: Justin F. Gaynor, Judy Huang
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Patent number: 6444542Abstract: A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.Type: GrantFiled: April 3, 2001Date of Patent: September 3, 2002Assignee: Texas Instruments IncorporatedInventors: Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin F. Gaynor, Stephen R. Gilbert, Francis Celii, Scott R. Summerfelt, Luigi Colombo
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Publication number: 20020041970Abstract: A two-component porous material including small silicalite crystals in a porous binder provides a low dielectric constant material useful as an insulating layer in microelectronic devices. The silicalite/binder porous material uses silicalite nanocrystals smaller than the characteristic dimensions of the features on the integrated circuit device. The binder is an amorphous porous material that links the silicalite nanocrystals together, formed from a precursor which polymerizes on heating. The silicalite nanocrystals are supplied as a colloidal suspension or slurry. The slurry and binder precursor are spincoated onto a substrate and thermally treated to polymerize the binder precursor and drive off solvent in the slurry, forming the porous silicalite/binder material. The silicalite/binder porous material is readily integrated into standard damascene fabrication processes.Type: ApplicationFiled: October 9, 2001Publication date: April 11, 2002Inventor: Justin F. Gaynor
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Publication number: 20010055852Abstract: A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.Type: ApplicationFiled: April 3, 2001Publication date: December 27, 2001Inventors: Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin F. Gaynor, Stephen R. Gilbert, Francis Celii, Scott R. Summerfelt, Luigi Colombo
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Patent number: 6329062Abstract: A two-component porous material including small silicalite crystals in a porous binder provides a low dielectric constant material useful as an insulating layer in microelectronic devices. The silicalite/binder porous material uses silicalite nanocrystals smaller than the characteristic dimensions of the features on the integrated circuit device. The binder is an amorphous porous material that links the silicalite nanocrystals together, formed from a precursor which polymerizes on heating. The silicalite nanocrystals are supplied as a colloidal suspension or slurry. The slurry and binder precursor are spincoated onto a substrate and thermally treated to polymerize the binder precursor and drive off solvent in the slurry, forming the porous silicalite/binder material. The silicalite/binder porous material is readily integrated into standard damascene fabrication processes.Type: GrantFiled: February 29, 2000Date of Patent: December 11, 2001Assignee: Novellus Systems, Inc.Inventor: Justin F. Gaynor
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Patent number: 6211035Abstract: A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.Type: GrantFiled: September 9, 1999Date of Patent: April 3, 2001Assignee: Texas Instruments IncorporatedInventors: Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin F. Gaynor, Stephen R. Gilbert, Francis Celii, Scott R. Summerfelt, Luigi Colombo