Patents by Inventor Justin G. Wehner
Justin G. Wehner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240162989Abstract: An apparatus includes a focal plane array configured to receive incoming light. The apparatus also includes a readout integrated circuit configured to generate electrical signals based on the incoming light received by the focal plane array. The apparatus further includes a photonic integrated circuit positioned between the focal plane array and the readout integrated circuit. The photonic integrated circuit is configured to receive the electrical signals and generate output optical signals based on the electrical signals. In some cases, the apparatus may include electrically-conductive vias electrically coupling the focal plane array and the readout integrated circuit, where at least some of the electrically-conductive vias may extend through the photonic integrated circuit. The focal plane array, the readout integrated circuit, and the photonic integrated circuit may form at least part of a monolithic structure.Type: ApplicationFiled: November 15, 2022Publication date: May 16, 2024Inventors: George T. Paloczi, Justin G. A. Wehner, Shelly J. Mechery
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Patent number: 10115764Abstract: In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels.Type: GrantFiled: August 15, 2011Date of Patent: October 30, 2018Assignee: RAYTHEON COMPANYInventors: Justin G. A. Wehner, Edward P. Smith
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Patent number: 8559113Abstract: Multi-spectral filter elements and methods of formation are disclosed. Each multi-spectral filter element may include a plurality of sub-filters that are, in some embodiments, each adapted to respond to electromagnetic radiation within respective ones of a plurality of spectral bands. A method embodiment includes forming an optical cavity layer. Volume of the optical cavity layer can be reduced in at least N?1 number of spatial regions. The reducing may include a number of selective removal steps equal to the binary logarithm function Log2 N. In this example, each spatial region corresponds to a respective one of the plurality sub-filters. The plurality of sub-filters include at least N sub-filters. In particular embodiments, the respective ones of the plurality of spectral bands may be at least partially discrete with respect to each other.Type: GrantFiled: December 10, 2009Date of Patent: October 15, 2013Assignee: Raytheon CompanyInventor: Justin G. A. Wehner
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Publication number: 20130043372Abstract: In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels.Type: ApplicationFiled: August 15, 2011Publication date: February 21, 2013Applicant: Raytheon CompanyInventors: Justin G. A. Wehner, Edward P. Smith
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Patent number: 8143687Abstract: A broadband radiation detector includes a first layer having a first type of electrical conductivity type. A second layer has a second type of electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region. A third layer has the second type of electrical conductivity type and an energy bandgap responsive to radiation in a second spectral region comprising longer wavelengths than the wavelengths of the first spectral region. The broadband radiation detector further includes a plurality of internal regions. Each internal region may be disposed at least partially within the third layer and each internal region may include a refractive index that is different from a refractive index of the third layer. The plurality of internal regions may be arranged according to a regularly repeating pattern.Type: GrantFiled: December 17, 2009Date of Patent: March 27, 2012Assignee: Raytheon CompanyInventors: Justin G. A. Wehner, Scott M. Johnson
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Patent number: 8023168Abstract: A method for manipulating light comprises receiving an incoming beam of light at a tunable optical device, the tunable optical device comprising an organic material having an optical property that can be selectively varied under the influence of an external bias. The method further comprises applying a selected external bias to the tunable optical device to change an optical property of the tunable optical device. The method also comprises controlling an optical property of a beam of light exiting the tunable optical device as a result of the selected external bias.Type: GrantFiled: January 15, 2009Date of Patent: September 20, 2011Assignee: Raytheon CompanyInventors: Andreas Hampp, Justin G. Wehner
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Publication number: 20110147877Abstract: A broadband radiation detector includes a first layer having a first type of electrical conductivity type. A second layer has a second type of electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region. A third layer has the second type of electrical conductivity type and an energy bandgap responsive to radiation in a second spectral region comprising longer wavelengths than the wavelengths of the first spectral region. The broadband radiation detector further includes a plurality of internal regions. Each internal region may be disposed at least partially within the third layer and each internal region may include a refractive index that is different from a refractive index of the third layer. The plurality of internal regions may be arranged according to a regularly repeating pattern.Type: ApplicationFiled: December 17, 2009Publication date: June 23, 2011Applicant: Raytheon CompanyInventors: Justin G. A. Wehner, Scott M. Johnson
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Publication number: 20110141569Abstract: Multi-spectral filter elements and methods of formation are disclosed. Each multi-spectral filter element may include a plurality of sub-filters that are, in some embodiments, each adapted to respond to electromagnetic radiation within respective ones of a plurality of spectral bands. A method embodiment includes forming an optical cavity layer. Volume of the optical cavity layer can be reduced in at least N?1 number of spatial regions. The reducing may include a number of selective removal steps equal to the binary logarithm function Log2 N. In this example, each spatial region corresponds to a respective one of the plurality sub-filters. The plurality of sub-filters include at least N sub-filters. In particular embodiments, the respective ones of the plurality of spectral bands may be at least partially discrete with respect to each other.Type: ApplicationFiled: December 10, 2009Publication date: June 16, 2011Applicant: Raytheon CompanyInventor: Justin G. A. Wehner
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Publication number: 20100327387Abstract: A photodiode may include a first region comprising substantially intrinsic semiconductor material, the region having a first side and a second side opposite to the first side. The photodiode may also include a second region comprising highly-doped p-type semiconductor material formed proximate to the first side of the first region. The photodiode may additionally include a third region comprising highly-doped n-type semiconductor material formed proximate to the second side of the first region. The photodiode may further include a fourth region comprising one of: (i) highly-doped p-type semiconductor formed between the first region and the third region, or (ii) highly-doped n-type semiconductor formed between the first region and the second region.Type: ApplicationFiled: June 26, 2009Publication date: December 30, 2010Inventors: Ichiro Kasai, Justin G. A. Wehner
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Publication number: 20100177371Abstract: A method for manipulating light comprises receiving an incoming beam of light at a tunable optical device, the tunable optical device comprising an organic material having an optical property that can be selectively varied under the influence of an external bias. The method further comprises applying a selected external bias to the tunable optical device to change an optical property of the tunable optical device. The method also comprises controlling an optical property of a beam of light exiting the tunable optical device as a result of the selected external bias.Type: ApplicationFiled: January 15, 2009Publication date: July 15, 2010Applicant: Raytheon CompanyInventors: Andreas Hampp, Justin G. Wehner