Abstract: An interventional medical device includes an insertion tube extending between a proximal end and a distal end. The distal end configured to be inserted into internal tissues of a patient during a medical procedure. The insertion tube has an internal channel. The interventional medical device includes a tool received in the internal channel of the insertion tube. The tool has a tool body and a needle at an end of the tool body forms a tip of the tool. The tool body forms a tool channel. The interventional medical device includes a pressure sensor module received in the tool channel. The pressure sensor module includes a pressure sensor and a carrier holding the pressure sensor. The carrier is coupled to the tool body to position the pressure sensor in the tool channel proximate to the tip of the tool for measuring pressure of fluid of the internal tissues of the patient.

Abstract: Reliable flow sensors with enclosures that have predictable thermal variations and reduced mechanical tolerances for a more consistent fluid flow and more consistent flow measurements. Thermal variations can be made predictable by using etched structures in silicon blocks. Mechanical tolerances can be reduced using lithography and high-precision semiconductor manufacturing equipment and techniques.

Abstract: Sensor devices and methods of operating for use with catheter-based treatments of microcardial microvascular obstruction by infusion of fluids having protective agents into vasculature are provided herein. Such catheter devices can include a first lumen configured for advancement over a guidewire and for passage of fluid having protective agents after removal of the guidewire and a second lumen for inflation of an angioplasty balloon and can further include a temperature and/or pressure sensor mounted on the catheter body. Such catheter devices can further include use of a distal occlusive membrane between the angioplasty balloon and distal end to facilitate infusion into microvasculature. The occlusive membrane can be deployed by relative movement of concentric channels, thereby reducing the need for additional lumen while optimizing the size of the catheter device and lumens.

Abstract: Reliable flow sensors with enclosures that have predictable thermal variations and reduced mechanical tolerances for a more consistent fluid flow and more consistent flow measurements. Thermal variations can be made predictable by using etched structures in silicon blocks. Mechanical tolerances can be reduced using lithography and high-precision semiconductor manufacturing equipment and techniques.

Abstract: Pressure sensors and associated structures that may have reduced light sensitivity. An example may provide structures reducing light at a component on a membrane of a pressure sensor.

Abstract: Pressure sensors and associated structures that may facilitate the use of automated connection processes and tools. An example may provide structures for aligning interconnect wires to pressure sensor bondpads in order to facilitate the use of automated processes and tools.

Abstract: Pressure sensors and their methods of manufacturing, where the pressure sensors have a small, thin form factor and may include features designed to improve manufacturability and where the method of manufacturing may improve yield and reduce overall costs.

Abstract: Pressure sensors and associated structures that may have reduced light sensitivity. An example may provide structures reducing light at a component on a membrane of a pressure sensor.

Abstract: Pressure sensors and associated structures that may facilitate the use of automated connection processes and tools. An example may provide structures for aligning interconnect wires to pressure sensor bondpads in order to facilitate the use of automated processes and tools.

Abstract: Pressure sensors and their methods of manufacturing, where the pressure sensors have a small, thin form factor and may include features designed to improve manufacturability and where the method of manufacturing may improve yield and reduce overall costs.

Abstract: Pressure sensors that may be used in harsh or corrosive environments. One example may provide a pressure sensor having membrane with a top surface that may be free of components or electrical connections. Instead, components and electrical connections may be located under the membrane. By providing a top surface free of components and electrical connections, the top surface of the pressure sensor may be placed in harsh or corrosive environments, while components and electrical connections under the membrane may remain protected.

Abstract: Pressure sensors that may be used in harsh or corrosive environments. One example may provide a pressure sensor having membrane with a top surface that may be free of components or electrical connections. Instead, components and electrical connections may be located under the membrane. By providing a top surface free of components and electrical connections, the top surface of the pressure sensor may be placed in harsh or corrosive environments, while components and electrical connections under the membrane may remain protected.

Abstract: A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.

Abstract: Method and apparatus for using a silylating agent after exposure to an oxidizing environment for repairing damage to low-k dielectric films are described. Plasma photoresist removal, or ashing, may damage bonds in the low-k materials, which may lead to a significant increase in the dielectric constant of the materials. The silylating agent may be used to repair damage to the low-k films after the ashing process. Additionally, a curing process using an oxidizing environment may damage bonds in low-k materials, which may subsequently be repaired by a silylating process. The described method and apparatus may be used with low-k dielectric films including hydrophobic porous oxide films. A chamber for processing a wafer in an oxidizing environment and subsequently performing a silylation process includes an oxidizing agent inlet and a silylating agent inlet.

Abstract: A intermetal level dielectrics with copolymers of parylene and cyclic siloxances (432, 482) between metal lines plus oxides (450, 490), and vapor deposition method for the copolymerization. Fluorination of the copolymers lowers dielectric constant and increases working temperature.