Patents by Inventor Justin H. Sato

Justin H. Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a semiconductor die with multiple depth shallow trench isolation
    Patent number: 8853091
    Abstract: A method for manufacturing a semiconductor die may have the steps of:—Providing a semiconductor substrate;—Processing the substrate to a point where shallow trench isolation (STI) can be formed;—Depositing at least one underlayer having a predefined thickness on the wafer;—Depositing a masking layer on top of the underlayer;—Shaping the masking layer to have areas of predefined depths;—Applying a photolithograthy process to expose all the areas where the trenches are to be formed; and—Etching the wafer to form silicon trenches wherein the depth of a trench depends on the location with respect to the masking layer area.
    Type: Grant
    Filed: January 12, 2010
    Date of Patent: October 7, 2014
    Assignee: Microchip Technology Incorporated
    Inventors: Justin H. Sato, Brian Hennes, Greg Stom, Robert P. Ma, Walter E. Lundy
  • MULTIPLE DEPTH SHALLOW TRENCH ISOLATION PROCESS
    Publication number: 20100184295
    Abstract: A method for manufacturing a semiconductor die may have the steps of:—Providing a semiconductor substrate;—Processing the substrate to a point where shallow trench isolation (STI) can be formed;—Depositing at least one underlayer having a predefined thickness on the wafer;—Depositing a masking layer on top of the underlayer;—Shaping the masking layer to have areas of predefined depths;—Applying a photolithograthy process to expose all the areas where the trenches are to be formed; and—Etching the wafer to form silicon trenches wherein the depth of a trench depends on the location with respect to the masking layer area.
    Type: Application
    Filed: January 12, 2010
    Publication date: July 22, 2010
    Inventors: Justin H. Sato, Brian Hennes, Greg Stom, Robert P. Ma, Walter E. Lundy