Patents by Inventor Justin Harnish

Justin Harnish has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicided recessed silicon
    Patent number: 9076888
    Abstract: Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: July 7, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Hasan Nejad, Thomas A. Figura, Gordon A. Haller, Ravi Iyer, John Mark Meldrim, Justin Harnish
  • Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuit
    Patent number: 7977236
    Abstract: Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: July 12, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Hasan Nejad, Thomas A. Figura, Gordon A. Haller, Ravi Iyer, John Mark Meldrim, Justin Harnish
  • Method Of Forming A Transistor Gate Of A Recessed Access Device, Method Of Forming A Recessed Transistor Gate And A Non-Recessed Transistor Gate, And Method Of Fabricating An Integrated Circuit
    Publication number: 20090239366
    Abstract: Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
    Type: Application
    Filed: June 2, 2009
    Publication date: September 24, 2009
    Inventors: Hasan Nejad, Thomas A. Figura, Gordon A. Haller, Ravi Iyer, John Mark Meldrim, Justin Harnish
  • Silicided recessed silicon
    Patent number: 7557032
    Abstract: Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
    Type: Grant
    Filed: September 1, 2005
    Date of Patent: July 7, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Hasan Nejad, Thomas A. Figura, Gordon A. Haller, Ravi Iyer, John Mark Meldrim, Justin Harnish
  • SILICIDED RECESSED SILICON
    Publication number: 20070105357
    Abstract: Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
    Type: Application
    Filed: December 21, 2006
    Publication date: May 10, 2007
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Hasan Nejad, Thomas Figura, Gordon Haller, Ravi Iyer, John Meldrim, Justin Harnish
  • Silicided recessed silicon
    Publication number: 20070049015
    Abstract: Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
    Type: Application
    Filed: September 1, 2005
    Publication date: March 1, 2007
    Inventors: Hasan Nejad, Thomas Figura, Gordon Haller, Ravi Iyer, John Meldrim, Justin Harnish