Abstract: The embodiments disclose a method including depositing a resist layer using a mixture of several different length polymer strings materials spanning a range of natural periodicity, and imprinting the mixture of several different length polymer strings using sheared guiding patterns to increase flexibility.

Abstract: Provided herein is an apparatus, including a patterned resist overlying a substrate; a number of features of the patterned resist, wherein the number of features respectively includes a number of sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, wherein the sidewall-protecting material is characteristic of a conformal, thin-film deposition, and wherein the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching.

Abstract: Provided herein is an apparatus, including a patterned resist overlying a substrate; a number of features of the patterned resist, wherein the number of features respectively includes a number of sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, wherein the sidewall-protecting material is characteristic of a conformal, thin-film deposition, and wherein the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching.

Abstract: The embodiments disclose a method including depositing a resist layer using a mixture of several different length polymer strings materials spanning a range of natural periodicity, and imprinting the mixture of several different length polymer strings using sheared guiding patterns to increase flexibility.

Abstract: A method and apparatus of thermal imprint lithography includes moving an imprinter against a surface to be imprinted, supplying energy to a layer of heating material, and forming features in the surface to be imprinted. The imprinter comprises a main body and the layer of heating material under the main body. In an embodiment the layer of heating material is electrically heated. In alternate embodiments, the layer of heating material is optically heated.

Abstract: A patterned magnetic layer is formed by bombardment of a masked high Mrt magnetic layer with a combination of both heavy ion species and light ion species. The method can be implemented as sequential process steps or in a single process step with the proper heavy/light ion species mixture. Advantageously, the combined heavy/light ion species bombardment method results in a patterned magnetic layer having high topographical uniformity across its surface.

Abstract: A method for measuring recession in a wafer undergoing an asymmetrical ion mill process. The method includes the formation of first and second reference features and possibly a dummy feature. The reference features are constructed such that the location of the midpoint between them is unaffected by the asymmetrical ion mill. By measuring the distance between a portion of the dummy feature and the midpoint between the reference features, the amount of recession of the dummy feature can be measured. The measurement can be used to calculate the relative location of the flare to the read sensor rear edge through overlay information. The reference features can be constructed as a pair of isosceles triangles with apexes that face one another. By keeping the angles of the sides of the features steep (ie.

Abstract: A method for determining interfacial information and critical dimensions of a sample using atomic force microscopy. Tip-specimen deconvolution is performed on the scan lines before the critical dimension information processing. Local maxima and minima or local slope change of each scan line are found on a plurality of scan lines. A best fit line is then found for the plurality of maxim and minima or slope change points. Two best fit lines may be found using a plurality of maxima or minima or slope change points. An intersection of the two best fit lines can be used to determine a critical dimension such as a transition point. Such a method may be used to determine a track width of a trapezoidal magnetic write head or may be used to determine the location of a flare point on a magnetic write head.

Abstract: To account for changing image contrast due to wafer/slider/mask charging in e-beam or ion beam wafer/slider/mask inspection or measurement tools, which could lead to false pattern recognition comparison and result in coordination verification failures, if a site of a wafer/slider/mask being inspected fails a pattern recognition test when compared to a first template, a second template configured with a different contrast is used for a second pattern recognition comparison after the tools starts stage search. Use of image histogram analysis principles can also be applied for interpolation or extrapolation of the two image templates for generating of a third template with a different image contrast from the first two for customizing template contrast for further pattern recognition robustness fine tuning.

Abstract: Methods and systems for determining dimensions of a structure that has a re-entrant profile are disclosed. A method includes imaging at least a portion of a top surface of the structure. Subsequently, a second portion of the structure is imaged from a plurality of perspectives. A third portion of the structure is also imaged from a plurality of perspectives. A dimension of a bottom portion of the structure is determined based on the imaging.

Abstract: A method of making and using thin film calibration features is described. To fabricate a calibration standard according to the invention raised features are first formed from an electrically conductive material with a selected atomic number. A conformal thin film layer is deposited over the exposed sidewalls of the raised features. The sidewall material is selected to have a different atomic number and is preferably an nonconductive such as silicon dioxide or alumina. After the nonconductive material deposition, a controlled directional RIE process is used to remove the insulator layer deposited on the top and bottom surface of the lines and trenches. The remaining voids between the sidewalls of the raised features are filled with a conductive material. The wafer is then planarized with chemical mechanical planarization (CMP) to expose the nonconductive sidewall material on the surface. The nonconductive sidewall material will be fine lines embedded in conductive material.

Abstract: To account for changing image contrast due to wafer/slider/mask charging in e-beam or ion beam wafer/slider/mask inspection or measurement tools, which could lead to false pattern recognition comparison and result in coordination verification failures, if a site of a wafer/slider/mask being inspected fails a pattern recognition test when compared to a first template, a second template configured with a different contrast is used for a second pattern recognition comparison after the tools starts stage search. Use of image histogram analysis principles can also be applied for interpolation or extrapolation of the two image templates for generating of a third template with a different image contrast from the first two for customizing template contrast for further pattern recognition robustness fine tuning.

Abstract: CMP process control array groups are fabricated upon the surface of the wafer for viewing through an optical microscope. The array groups include a plurality of test arrays, where each array includes a plurality of projecting test features. Each of the projecting test features are formed with the same projecting height and have a hard upper surface layer, such as diamond-like-carbon (DLC). All of the projecting test features within an array are formed with the same diameter, and the diameter of projecting test features of a particular array differs from the diameter of projecting test features in another array. The diameters are chosen such that the DLC surface is removed in specifically designed time increments, such as 5 seconds, from array to array, where projecting test features with the DLC surface removed appear as bright white, while the arrays with test features that retain some DLC surface are significantly darker.