Abstract: A method and apparatus for rinsing and spin-drying a hydrophobic material such as a hydrophobic semiconductor wafer improves wafer drying while at the same time reduces the formation of residual contaminants on the dried surface of the wafer. This is accomplished by first establishing a safe-zone between a minimum rotational speed above which drying proceeds satisfactorily and a maximum rotational speed above which contaminants dry on the wafer's surface. A spin-rate profile can then be adopted such that the rinse/dry process proceeds within the safe zone.

Abstract: A method and apparatus for rinsing and spin-drying a hydrophobic material such as a hydrophobic semiconductor wafer improves wafer drying while at the same time reduces the formation of residual contaminants on the dried surface of the wafer. This is accomplished by first establishing a safe-zone between a minimum rotational speed above which drying proceeds satisfactorily and a maximum rotational speed above which contaminants dry on the wafer's surface. A spin-rate profile can then be adopted such that the rinse/dry process proceeds within the safe zone.

Abstract: The invention provides a method for differentially applying cleaning chemistries to a silicon wafer that has undergone a polishing process whether chemical mechanical polishing or polishing with a fixed abrasive material. In accordance with the invention, cleaning fluid with a specific chemistry designed for cleaning the front side of the wafer is applied to the front side; while different chemistry specifically selected for more effectively cleaning the rear side of the wafer is applied to that side. This application of different chemistries to the two sides of the wafer is referred to as “differential cleaning”.