Patents by Inventor Justin Michael Yerger

Justin Michael Yerger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IGBT having improved clamp arrangement
    Patent number: 10218349
    Abstract: In one embodiment, an insulated gate bipolar transistor (IGBT) device may include an NMOS portion and a PNP portion, where the PNP portion is coupled to the NMOS portion. The PNP portion may include a base and a collector. The IGBT may further include a flyback clamp, where the flyback clamp is coupled between the base and the collector of the PNP portion.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: February 26, 2019
    Assignee: Littelfuse, Inc.
    Inventor: Justin Michael Yerger
  • IGBT WITH IMPROVED REVERSE BLOCKING CAPABILITY
    Publication number: 20180145130
    Abstract: An insulated gate bipolar transistor (IGBT) device. The IGBT may include a substrate layer, the substrate layer comprising a p-type dopant, a first epitaxial layer, disposed on the substrate layer, the first epitaxial layer comprising an N-type dopant having a first concentration. The IGBT may also include a second epitaxial layer, disposed on the first epitaxial layer, the second epitaxial layer comprising an N-type dopant having a second concentration, the second concentration being greater than the first concentration. The IGBT may further include a third epitaxial layer, disposed on the second epitaxial layer, the third epitaxial layer comprising an N-type dopant having a third concentration, the third concentration being less than the first concentration.
    Type: Application
    Filed: July 5, 2017
    Publication date: May 24, 2018
    Applicant: Littelfuse, Inc.
    Inventors: Filip Kudrna, Roman Malousek, Justin Michael Yerger
  • IGBT HAVING IMPROVED CLAMP ARRANGEMENT
    Publication number: 20170373679
    Abstract: In one embodiment, an insulated gate bipolar transistor (IGBT) device may include an NMOS portion and a PNP portion, where the PNP portion is coupled to the NMOS portion. The PNP portion may include a base and a collector. The IGBT may further include a flyback clamp, where the flyback clamp is coupled between the base and the collector of the PNP portion.
    Type: Application
    Filed: July 5, 2017
    Publication date: December 28, 2017
    Applicant: Littelfuse, Inc.
    Inventor: Justin Michael Yerger