Abstract: An embodiment of a dual-path amplifier includes a power splitter connected to first and second power amplifiers respectively connected to first and second transmission lines connected to a power combiner having a phase-offset deficit at the second harmonic frequency 2f0, where the first and second transmission lines are designed to provide a complementary phase offset at 2f0 substantially equal to the phase-offset deficit such that the two amplified signals will be combined at the power converter with a total phase offset at 2f0 of about 180 degrees in order to reduce harmonic distortion in the amplified output signal, without substantially diminishing the output power at the fundamental frequency f0. In certain PCB-based implementations, the transmission lines include metal traces and lumped elements providing different impedance transformations that achieve the complementary phase offset, where the metal traces may have significantly different physical and electrical characteristics.

Abstract: A radio frequency (RF) amplifier configured to operate at a fundamental frequency (f0) includes a transistor with a transistor output, an output matching network coupled to the transistor output, and a reflection absorption circuit. The output matching network includes an output path device connected between the transistor output and an output of the RF amplifier. The reflection absorption circuit is coupled between the transistor output and the output path device, and is configured to absorb reflected signal energy from the output path device.

Abstract: The embodiments described herein include amplifiers that are typically used in radio frequency (RF) applications. Specifically, the amplifiers described herein include one or more transient termination circuits coupled to transistor inputs. For example, the transient termination circuits can be configured to reduce the transient response for some signal energy at frequencies below a baseband frequency (fB) of signals being amplified while not similarly reducing the transient response for signal energy near a fundamental frequency (f0) of the signals being amplified.

Abstract: An embodiment of a dual-path amplifier includes a power splitter connected to first and second power amplifiers respectively connected to first and second transmission lines connected to a power combiner having a phase-offset deficit at the second harmonic frequency 2f0, where the first and second transmission lines are designed to provide a complementary phase offset at 2f0 substantially equal to the phase-offset deficit such that the two amplified signals will be combined at the power converter with a total phase offset at 2f0 of about 180 degrees in order to reduce harmonic distortion in the amplified output signal, without substantially diminishing the output power at the fundamental frequency f0. In certain PCB-based implementations, the transmission lines include metal traces and lumped elements providing different impedance transformations that achieve the complementary phase offset, where the metal traces may have significantly different physical and electrical characteristics.

Abstract: The embodiments described herein include amplifiers that are typically used in radio frequency (RF) applications. Specifically, the amplifiers described herein include one or more transient termination circuits coupled to transistor inputs. For example, the transient termination circuits can be configured to reduce the transient response for some signal energy at frequencies below a baseband frequency (fB) of signals being amplified while not similarly reducing the transient response for signal energy near a fundamental frequency (f0) of the signals being amplified.

Abstract: A radio frequency (RF) amplifier configured to operate at a fundamental frequency (f0) includes a transistor with a transistor output, an output matching network coupled to the transistor output, and a reflection absorption circuit. The output matching network includes an output path device connected between the transistor output and an output of the RF amplifier. The reflection absorption circuit is coupled between the transistor output and the output path device, and is configured to absorb reflected signal energy from the output path device.

Abstract: Nested microstrip systems and methods, and systems and methods encompassing same, are disclosed herein. In one example, a nested microstrip system includes a printed circuit board (PCB) having first and second layer levels, where first and second conductive traces are positioned at the second layer level. The first conductive trace is configured to include an orifice, and to extend between first and second locations along a first path, and the second conductive trace is positioned within the orifice. A non-conductive gap portion of the orifice exists between the first and second conductive traces so that the second conductive trace is electrically isolated from the first conductive trace. One or more first electromagnetic signals can be propagated along a first part of the first conductive trace, and one or more second electromagnetic signals can be propagated along at least a second part of the second conductive trace.

Abstract: A radio frequency (RF) amplifier circuit includes an amplifier device and a first baseband bias circuit. The amplifier device includes a first input configured to receive a first signal to be amplified and a first output configured to output a first amplified signal. The first baseband bias circuit includes an input coupled to the first output of the amplifier device. The first baseband bias circuit includes a first envelope decoupling circuit and a first harmonic decoupling circuit. The first envelope decoupling circuit includes a first bulk capacitor and a first distributed inductor configured to resonate in a baseband frequency range. The first harmonic decoupling circuit includes a second bulk capacitor and a second distributed inductor configured to resonate at a harmonic frequency of the frequency of the first signal received at the input of the amplifier device.

Abstract: A radio frequency (RF) amplifier circuit includes an amplifier device and a first baseband bias circuit. The amplifier device includes a first input configured to receive a first signal to be amplified and a first output configured to output a first amplified signal. The first baseband bias circuit includes an input coupled to the first output of the amplifier device. The first baseband bias circuit includes a first envelope decoupling circuit and a first harmonic decoupling circuit. The first envelope decoupling circuit includes a first bulk capacitor and a first distributed inductor configured to resonate in a baseband frequency range. The first harmonic decoupling circuit includes a second bulk capacitor and a second distributed inductor configured to resonate at a harmonic frequency of the frequency of the first signal received at the input of the amplifier device.

Abstract: A lead, for a packaged transistor device, having a signal portion and a bias line portion, with the signal portion and the bias line portion each having a proximal end and a distal end. The signal portion and the bias line portions of the lead are integrally formed together as a single conductive component, with the proximal end of the bias line portion integrated into the signal portion of the lead and with the distal ends of the signal portion and the bias line portion physically separate from each other.

Abstract: Nested microstrip systems and methods, and systems and methods encompassing same, are disclosed herein. In one example, a nested microstrip system includes a printed circuit board (PCB) having first and second layer levels, where first and second conductive traces are positioned at the second layer level. The first conductive trace is configured to include an orifice, and to extend between first and second locations along a first path, and the second conductive trace is positioned within the orifice. A non-conductive gap portion of the orifice exists between the first and second conductive traces so that the second conductive trace is electrically isolated from the first conductive trace. One or more first electromagnetic signals can be propagated along a first part of the first conductive trace, and one or more second electromagnetic signals can be propagated along at least a second part of the second conductive trace.

Abstract: A lead, for a packaged transistor device, having a signal portion and a bias line portion, with the signal portion and the bias line portion each having a proximal end and a distal end. The signal portion and the bias line portions of the lead are integrally formed together as a single conductive component, with the proximal end of the bias line portion integrated into the signal portion of the lead and with the distal ends of the signal portion and the bias line portion physically separate from each other.