Abstract: Input devices are provided. In accordance with an example embodiment, an input device includes an interface layer that flexes in response to pressure, a plurality of sense electrodes, a dielectric between the sense electrodes and the interface layer, and interconnecting circuitry. The dielectric compresses or expands in response to movement of the interface layer, and exhibits dielectric characteristics that vary based upon a state of compression of the dielectric. The interconnecting circuitry is to the sense electrodes and provides an output indicative of both the position of each sense electrode and an electric characteristic at each sense electrode that provides an indication of pressure applied to the dielectric adjacent the respective sense electrodes.

Abstract: Input devices are provided. In accordance with an example embodiment, an input device includes an interface layer that flexes in response to pressure, a plurality of sense electrodes, a dielectric between the sense electrodes and the interface layer, and interconnecting circuitry. The dielectric compresses or expands in response to movement of the interface layer, and exhibits dielectric characteristics that vary based upon a state of compression of the dielectric. The interconnecting circuitry is to the sense electrodes and provides an output indicative of both the position of each sense electrode and an electric characteristic at each sense electrode that provides an indication of pressure applied to the dielectric adjacent the respective sense electrodes.

Abstract: Input devices are provided. In accordance with an example embodiment, an input device includes an interface layer that flexes in response to pressure, a plurality of sense electrodes, a dielectric between the sense electrodes and the interface layer, and interconnecting circuitry. The dielectric compresses or expands in response to movement of the interface layer, and exhibits dielectric characteristics that vary based upon a state of compression of the dielectric. The interconnecting circuitry is coupled to the sense electrodes and provides an output indicative of both the position of each sense electrode and an electric characteristic at each sense electrode that provides an indication of pressure applied to the dielectric adjacent the respective sense electrodes.

Abstract: Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.

Abstract: Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.

Abstract: Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.

Abstract: Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.