Abstract: A substrate carrier is described that uses a proportional thermal fluid delivery system. In one example the apparatus includes a heat exchanger to provide a thermal fluid to a fluid channel of a substrate carrier and to receive the thermal fluid from the fluid channel, the thermal fluid in the fluid channel to control the temperature of the carrier during substrate processing. A proportional valve controls the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve in response to the measured temperature to adjust the rate of flow.

Abstract: Methods for RF pulse reflection reduction are provided herein. In some embodiments, a method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power includes; receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators, using the master RF generator to generate a transistor-transistor logic (TTL) signal having a base frequency and a first duty cycle, setting a multiplier for each RF generator, dividing the first duty cycle into a high level interval and a low level interval, determining a frequency command set for each RF generator and sending the frequency command set to each RF generator, wherein the frequency command set includes a frequency set point for each RF generator; and providing the plurality of pulsed RF power waveforms from the plurality of RF generators to a process chamber.

Abstract: Methods for RF pulse reflection reduction are provided herein. In some embodiments, a method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power includes; receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators, using the master RF generator to generate a transistor-transistor logic (TTL) signal having a base frequency and a first duty cycle, setting a multiplier for each RF generator, dividing the first duty cycle into a high level interval and a low level interval, determining a frequency command set for each RF generator and sending the frequency command set to each RF generator, wherein the frequency command set includes a frequency set point for each RF generator; and providing the plurality of pulsed RF power waveforms from the plurality of RF generators to a process chamber.

Abstract: A substrate carrier is described that uses a proportional thermal fluid delivery system. In one example the apparatus includes a heat exchanger to provide a thermal fluid to a fluid channel of a substrate carrier and to receive the thermal fluid from the fluid channel, the thermal fluid in the fluid channel to control the temperature of the carrier during substrate processing. A proportional valve controls the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve in response to the measured temperature to adjust the rate of flow.

Abstract: A substrate carrier is described that uses a proportional thermal fluid delivery system. In one example the apparatus includes a heat exchanger to provide a thermal fluid to a fluid channel of a substrate carrier and to receive the thermal fluid from the fluid channel, the thermal fluid in the fluid channel to control the temperature of the carrier during substrate processing. A proportional valve controls the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve in response to the measured temperature to adjust the rate of flow.

Abstract: Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level, a second power level, and a third power level, providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level, a second power level, and a third power level, and processing the substrate using the first multi-level RF power waveform and the second multi-level RF power waveform to produce a features on the substrate have an aspect ratio of greater than 60:1 while maintaining an etch rate of greater than 170 nm/min.

Abstract: Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, and providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration.

Abstract: Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

Abstract: Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, and providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration.

Abstract: A substrate carrier is described that uses a proportional thermal fluid delivery system In one example the apparatus includes a heat exchanger to provide a thermal fluid to a fluid channel of a substrate carrier and to receive the thermal fluid from the fluid channel, the thermal fluid in the fluid channel to control the temperature of the carrier during substrate processing. A proportional valve controls the rate of flow of thermal fluid from the heat exchanger to the fluid channel, A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve in response to the measured temperature to adjust the rate of flow.

Abstract: The disclosure concerns a plasma-enhanced etch process in which chamber pressure and/or RF power level is ramped throughout the etch process.

Abstract: Methods and systems for adapting and/or tuning feedforward control parameters in a plasma processing chamber. In embodiments, a dependent process parameter, such as a chamber component temperature, is controlled with a feedforward control algorithm based on one or more independent process parameters, such as RF power. A control algorithm may calculate steady-state deviation of the dependent parameter from a process recipe setpoint, estimate an amount by which an existing control gain coefficient is to be changed to better achieve the setpoint, associate the new control gain coefficient with the particular recipe operation, and store the new control gain coefficient for subsequent execution of the recipe operation. In embodiments, the amount by which a gain coefficient is to be changed is based on a model function derived from a lookup table associating gain coefficients with setpoints of the dependent process parameter and values of the independent process parameter.