Abstract: Methods are provided for chemical mechanical planarization of a layer and for determining the endpoint of a CMP operation. In accordance with one embodiment the method for determining an endpoint comprises making a plurality of eddy current thickness measurement of the layer being planarized, each of the plurality of measurements spaced apart by a predetermined length of time. A difference is calculated between sequential ones of the plurality of eddy current measurements, and a predetermined minimum threshold for the difference is set. The endpoint is defined as a calculated difference less than the predetermined minimum threshold.

Abstract: Methods are provided for monitoring a CMP process. An exemplary method comprises generating a plurality of thickness measurements of a metal layer using an in-situ eddy current measuring system. The thickness measurements are analyzed to derive a plurality of work piece metrics and the work piece metrics are assessed to determine if a predetermined number is within a predetermined specification. A signal is generated if the predetermined number of the work piece metrics is outside the predetermined specification.

Abstract: Methods are provided for controlling adjustable pressure zones of a CMP carrier. A method comprises determining a first thickness of a layer on a wafer underlying a first zone of the carrier. A first portion of the layer underlying the first zone is removed. The first zone is configured to exert a first pressure against the second surface of the wafer. A second thickness of the layer underlying the first zone is determined and a target thickness corresponding to a predetermined thickness profile is selected. A second pressure for the first zone is calculated using the first thickness, the second thickness, the first pressure, and the target thickness. The pressure exerted by the first zone against the second surface of the wafer is adjusted to the second pressure and the steps are repeated for a second zone.