Abstract: Techniques for fabricating a solid oxide electrolyzer cell (SOEC) including sintering an electrolyte, printing a fuel-side electrode disposed on a fuel side of the electrolyte, printing an air-side electrode disposed on an air side of the electrolyte, first sintering a combination of the electrolyte, fuel-side electrode, and air-side electrode, printing a barrier layer an air side of the electrolyte, printing a functional layer on the barrier layer, printing a collector layer on the functional layer, and second sintering a combination of the electrolyte, fuel-side electrode, air-side electrode, barrier layer, functional layer, and collector layer.

Abstract: A solid oxide electrolyzer cell (SOEC) includes a solid oxide electrolyte, a fuel-side electrode disposed on a fuel side of the electrolyte, and an air-side electrode disposed on an air side of the electrolyte. The air-side electrode includes a barrier layer disposed on the air side of the electrolyte and including a first doped ceria material, and a functional layer disposed on the barrier layer and including an electrically conductive material and a second doped ceria material.

Abstract: Transistor structures including a non-planar body that has an active portion comprising a semiconductor material of a first height that is variable, and an inactive portion comprising an oxide of the semiconductor material of a second variable height, complementary to the first height. Gate electrodes and source/drain terminals may be coupled through a transistor channel having any width that varies according to the first height. Oxidation of a semiconductor material may be selectively catalyzed to convert a desired portion of a non-planar body into the oxide of the semiconductor material. Oxidation may be enhanced through the application of a catalyst, such as one comprising metal and oxygen, for example.

Abstract: Transistor structures including a non-planar body that has an active portion comprising a semiconductor material of a first height that is variable, and an inactive portion comprising an oxide of the semiconductor material of a second variable height, complementary to the first height. Gate electrodes and source/drain terminals may be coupled through a transistor channel having any width that varies according to the first height. Oxidation of a semiconductor material may be selectively catalyzed to convert a desired portion of a non-planar body into the oxide of the semiconductor material. Oxidation may be enhanced through the application of a catalyst, such as one comprising metal and oxygen, for example.