Abstract: Optoelectronic structures and methods of formation are described. In an embodiment, an optoelectronic structure includes a backplane with a driving circuitry and an array of contact pads, and a device layer bonded to the backplane. The device layer may include an array of micro-sized diodes and landing pads, and a reconstituted wiring layer including an array of via contacts connected to the array of landing pads. The reconstituted wiring layer can be directly bonded with the array of contacts with metal-metal bonds. A placement distribution of the array of landing can be decoupled from a position distribution of the array of via contacts.

Abstract: A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.

Abstract: A material layer stack for a pSTTM memory device includes a magnetic tunnel junction (MTJ) stack, a oxide layer, a protective layer and a capping layer. The MTJ includes a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free magnetic layer disposed on the tunnel barrier. The oxide layer, which enables an increase in perpendicularity of the pSTTM material layer stack, is disposed on the free magnetic layer. The protective layer is disposed on the oxide layer, and acts as a protective barrier to the oxide from physical sputter damage during subsequent layer deposition. A conductive capping layer with a low oxygen affinity is disposed on the protective layer to reduce iron-oxygen de-hybridization at the interface between the free magnetic layer and the oxide layer. The inherent non-oxygen scavenging nature of the conductive capping layer enhances stability and reduces retention loss in pSTTM devices.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: Strain engineering of perpendicular magnetic tunnel junctions (PMTJs) is described. In an example, a memory structure includes a perpendicular magnetic tunnel junction (pMTJ) element disposed above a substrate. A lateral strain-inducing material layer is disposed on the pMTJ element. An inter-layer dielectric (ILD) layer disposed laterally adjacent to both the pMTJ element and the lateral strain-inducing material layer.

Abstract: MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such pSTTM devices. In some embodiments, perpendicular MTJ material stacks include a multi-layered filter stack disposed between a fixed magnetic layer and an antiferromagnetic layer or synthetic antiferromagnetic (SAF) stack. In some embodiments, non-magnetic layers of the filter stack include at least one of Ta, Mo, Nb, W, or Hf. These transition metals may be in pure form or alloyed with other constituents.

Abstract: An embodiment includes an apparatus including: a substrate; a perpendicular magnetic tunnel junction (pMTJ), on the substrate, including a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers; a first dielectric layer between the first fixed layer and the free layer; and a second layer between the second fixed layer and the free layer. Other embodiments are described herein.

Abstract: Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.

Abstract: MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular MTJ material stacks with free magnetic layers are magnetically coupled through a metal material layer for improved stability and low damping. In some advantageous embodiments, layers of a free magnetic material stack are magnetically coupled through a coupling layer of a metal comprising at least molybdenum (Mo). The Mo may be in pure form or alloyed with other constituents.

Abstract: An apparatus including an array of memory cells arranged in a grid defined by word lines and bit lines in a generally orthogonal orientation relative to one another, a memory cell including a resistive memory component and an access transistor, wherein the access transistor includes a diffusion region disposed at an acute angle relative to an associated word line. A method including etching a substrate to form a plurality of fins each including a body having a length dimension including a plurality of first junction regions and a plurality of second junction regions that are generally parallel to one another and offset by angled channel regions displacing in the length dimension an end of a first junction region from the beginning of a second junction region; removing the spacer material; and introducing a gate electrode on the channel region of each of the plurality of fins.

Abstract: An embodiment includes an apparatus comprising: a substrate; a perpendicular magnetic tunnel junction (pMTJ), on the substrate, comprising a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers; a first dielectric layer between the first fixed layer and the free layer; and a second layer between the second fixed layer and the free layer. Other embodiments are described herein.

Abstract: A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: A material layer stack for a pSTTM memory device includes a magnetic tunnel junction (MTJ) stack, a oxide layer, a protective layer and a capping layer. The MTJ includes a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free magnetic layer disposed on the tunnel barrier. The oxide layer, which enables an increase in perpendicularity of the pSTTM material layer stack, is disposed on the free magnetic layer. The protective layer is disposed on the oxide layer, and acts as a protective barrier to the oxide from physical sputter damage during subsequent layer deposition. A conductive capping layer with a low oxygen affinity is disposed on the protective layer to reduce iron-oxygen de-hybridization at the interface between the free magnetic layer and the oxide layer. The inherent non-oxygen scavenging nature of the conductive capping layer enhances stability and reduces retention loss in pSTTM devices.

Abstract: MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such pSTTM devices. In some embodiments, perpendicular MTJ material stacks include a multi-layered filter stack disposed between a fixed magnetic layer and an antiferromagnetic layer or synthetic antiferromagnetic (SAF) stack. In some embodiments, non-magnetic layers of the filter stack include at least one of Ta, Mo, Nb, W, or Hf. These transition metals may be in pure form or alloyed with other constituents.

Abstract: Described is an apparatus which comprises: a magnetic tunneling junction (MTJ) device with out-of-plane magnetizations for its free and fixed magnetic layers, and configured to have a magnetization offset away from a center and closer to a switching threshold of the MTJ device; and logic for generating random numbers according to a resistive state of the MTJ device.

Abstract: MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such pSTTM devices. In some embodiments, perpendicular MTJ material stacks include one or more electrode interface material layers disposed between a an electrode metal, such as TiN, and a seed layer of an antiferromagnetic layer or synthetic antiferromagnetic (SAF) stack. The electrode interface material layers may include either or both of a Ta material layer or CoFeB material layer. In some Ta embodiments, a Ru material layer may be deposited on a TiN electrode surface, followed by the Ta material layer. In some CoFeB embodiments, a CoFeB material layer may be deposited directly on a TiN electrode surface, or a Ta material layer may be deposited on the TiN electrode surface, followed by the CoFeB material layer.

Abstract: MTJ material stacks, pSTTM devices employing such stacks, and computing platforms employing such pSTTM devices. In some embodiments, perpendicular MTJ material stacks include a multi-layered filter stack disposed between a fixed magnetic layer and an antiferromagnetic layer or synthetic antiferromagnetic (SAF) stack. In some embodiments, non-magnetic layers of the filter stack include at least one of Ta, Mo, Nb, W, or Hf. These transition metals may be in pure form or alloyed with other constituents.

Abstract: Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.