Abstract: A method of analyzing a polymer resin comprising: providing a polymer resin sample having two or more polymer components; subjecting the sample to aTREF analysis to yield aTREF elution trace by contacting the sample with aTREF solvent to form sample solution; introducing sample solution into aTREF column and allowing elution of polymer components at different elution rates along the column; eluting from the aTREF column an aTREF eluent comprising the polymer components eluting at different rates; and subjecting the aTREF eluent to IR detection to yield the aTREF elution trace; identifying the components of the sample to yield identified components by comparing the elution trace with an identification library that comprises a plurality of known polymer aTREF elution traces correlated with known polymer components characterized by identifying parameters (density, SCB, crystallization temperature, MI, HLMI, MWD); and quantifying each of the identified components to yield quantified polymer components via chemome

Abstract: A method of analyzing a polymer resin comprising: providing a polymer resin sample having two or more polymer components; subjecting the sample to aTREF analysis to yield aTREF elution trace by contacting the sample with aTREF solvent to form sample solution; introducing sample solution into aTREF column and allowing elution of polymer components at different elution rates along the column; eluting from the aTREF column an aTREF eluent comprising the polymer components eluting at different rates; and subjecting the aTREF eluent to IR detection to yield the aTREF elution trace; identifying the components of the sample to yield identified components by comparing the elution trace with an identification library that comprises a plurality of known polymer aTREF elution traces correlated with known polymer components characterized by identifying parameters (density, SCB, crystallization temperature, MI, HLMI, MWD); and quantifying each of the identified components to yield quantified polymer components via chemome

Abstract: Polymer compositions containing an ethylene polymer, 50-1500 ppm by weight of a glycerol stearate, and 250-7500 ppm by weight of an antioxidant selected from a phenolic antioxidant, a phosphite antioxidant, a thioester antioxidant, or any combination thereof, are described. These polymer compositions have improved initial color, improved color after long-term aging, or improved color after multi-pass extrusion processing.

Abstract: Polymer compositions containing an ethylene polymer, 50-1500 ppm by weight of a glycerol stearate, and 250-7500 ppm by weight of an antioxidant selected from a phenolic antioxidant, a phosphite antioxidant, a thioester antioxidant, or any combination thereof, are described. These polymer compositions have improved initial color, improved color after long-term aging, or improved color after multi-pass extrusion processing.

Abstract: A method for preparing semiconductor nanocrystals comprising indium arsenide is disclosed.

Abstract: Disclosed are a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element; a method for preparing a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, and a light emitting device including an emissive material comprising a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element.

Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed.

Abstract: A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.

Abstract: A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.

Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a reaction mixture including a solvent in a reaction vessel, maintaining the reaction mixture at a first temperature and for a first time period sufficient to produce semiconductor nanocrystal seed particles of the cation and the anion, and maintaining the reaction mixture at a second temperature that is higher than the first temperature for a second time period sufficient to enlarge the semiconductor nanocrystal seed particles to produce semiconductor nanocrystals from the cation and the anion.

Abstract: Semiconductor nanocrystals and methods of making are provided.

Abstract: Disclosed are a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element; a method for preparing a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, and a light emitting device including an emissive material comprising a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element.

Abstract: A method for preparing semiconductor nanocrystals comprising indium arsenide is disclosed.

Abstract: A poly(arylene sulfide) polymer composition comprising a neat poly(arylene sulfide) polymer and a cyclic oligomer nucleating agent, wherein the cyclic oligomer nucleating agent is contacted with the neat poly(arylene sulfide) polymer in an amount of from about 0.25 wt. % to about 1 wt. % cyclic oligomer nucleating agent, based on the total weight of the poly(arylene sulfide) polymer composition, and wherein the poly(arylene sulfide) polymer composition is characterized by a melt crystallization temperature (Tmc) that is greater by at least about 5° C. than a Tmc of the neat poly(arylene sulfide) polymer.

Abstract: A process for producing a poly(arylene sulfide) polymer comprising (a) polymerizing reactants in a reaction vessel to produce a poly(arylene sulfide) reaction mixture, (b) processing at least a portion of the poly(arylene sulfide) reaction mixture to obtain a poly(arylene sulfide) reaction mixture downstream product, and (c) contacting a reactive aryl halide with at least a portion of the poly(arylene sulfide) reaction mixture and/or downstream product thereof, wherein before and/or after the contacting, the poly(arylene sulfide) reaction mixture and/or downstream product thereof comprise less than about 0.025 wt. % thiophenol, based on the total weight of the poly(arylene sulfide) reaction mixture and/or downstream product thereof.

Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a reaction mixture including a solvent in a reaction vessel, maintaining the reaction mixture at a first temperature and for a first time period sufficient to produce semiconductor nanocrystal seed particles of the cation and the anion, and maintaining the reaction mixture at a second temperature that is higher than the first temperature for a second time period sufficient to enlarge the semiconductor nanocrystal seed particles to produce semiconductor nanocrystals from the cation and the anion.

Abstract: A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.

Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed.

Abstract: A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.