Abstract: A solution for managing a manufacturing environment using operating data for each of a plurality of tools in the manufacturing environment. The operating data can include actual resource consumption data and/or actual exhaust generation data for a tool while the tool implements at least a portion of a recipe to manufacture one of a plurality of types of products manufactured in the manufacturing environment. Operation of the manufacturing environment can be configured to optimize one or more aspects of resource consumption and/or exhaust generation during the manufacture of desired quantities of the plurality of types of products within a desired time frame using the operating data.

Abstract: A solution for managing a manufacturing environment using operating data for each of a plurality of tools in the manufacturing environment. The operating data can include actual resource consumption data and/or actual exhaust generation data for a tool while the tool implements at least a portion of a recipe to manufacture one of a plurality of types of products manufactured in the manufacturing environment. Operation of the manufacturing environment can be configured to optimize one or more aspects of resource consumption and/or exhaust generation during the manufacture of desired quantities of the plurality of types of products within a desired time frame using the operating data.

Abstract: Disclosed are embodiments that provide near real-time monitoring of a control application in a manufacturing environment to detect and determine the root cause of faults within the control application. The embodiments monitor the flow of data within the control application during events (i.e., transactions, stages, process steps, etc.). By comparing a dataflow path for a near real-time event with historical dataflow path records, dataflow interruptions (i.e., fails) within the control application can be detected. By determining the location of such a dataflow interruption, the root cause of the control application fail can be determined. Additionally, the invention can generate summary reports indicating the status of the control application. For example, the summary reports can quantify the performance and/or the effectiveness of the control application. These summary reports can further be generated with drill downs to provide a user with direct access to the records upon which the reports were based.

Abstract: Disclosed are embodiments that provide near real-time monitoring of a control application in a manufacturing environment in order to detect and determine the root cause of faults within the control application. The embodiments monitor the flow of data within the control application during certain events (i.e., certain transactions, stages, process steps, etc.). By comparing a dataflow path for a near real-time event with historical dataflow path records, dataflow interruptions (i.e., fails) within the control application can be detected. By determining the location of such a dataflow interruption, the root cause of the control application fail can be determined. Additionally, the invention can generate summary reports that quantify the performance and/or the effectiveness of the control application. These summary reports can further be generated with drill downs to provide a user with direct access to the records upon which the reports were based.

Abstract: Disclosed are embodiments that provide near real-time monitoring of a control application in a manufacturing environment to detect and determine the root cause of faults within the control application. The embodiments monitor the flow of data within the control application during events (i.e., transactions, stages, process steps, etc.). By comparing a dataflow path for a near real-time event with historical dataflow path records, dataflow interruptions (i.e., fails) within the control application can be detected. By determining the location of such a dataflow interruption, the root cause of the control application fail can be determined. Additionally, the invention can generate summary reports indicating the status of the control application. For example, the summary reports can quantify the performance and/or the effectiveness of the control application. These summary reports can further be generated with drill downs to provide a user with direct access to the records upon which the reports were based.

Abstract: An apparatus for collecting data during processing of a structure, such as a semiconductor wafer, which includes data collection devices or sensors positioned in a processing chamber for processing the wafer. The data collection sensors may operate at speeds of about 10 Hertz (Hz). A controller communicates and receives data from the data collection sensors. A data processing device communicates with the controller for receiving and processing the data, and the data processing device analyzes the data and determines at least one process response.

Abstract: Disclosed are embodiments that provide near real-time monitoring of a control application in a manufacturing environment to detect and determine the root cause of faults within the control application. The embodiments monitor the flow of data within the control application during events (i.e., transactions, stages, process steps, etc.). By comparing a dataflow path for a near real-time event with historical dataflow path records, dataflow interruptions (i.e., fails) within the control application can be detected. By determining the location of such a dataflow interruption, the root cause of the control application fail can be determined. Additionally, the invention can generate summary reports indicating the status of the control application. For example, the summary reports can quantify the performance and/or the effectiveness of the control application. These summary reports can further be generated with drill downs to provide a user with direct access to the records upon which the reports were based.

Abstract: Disclosed are embodiments that provide near real-time monitoring of a control application in a manufacturing environment to detect and determine the root cause of faults within the control application. The embodiments monitor the flow of data within the control application during events (i.e., transactions, stages, process steps, etc.). By comparing a dataflow path for a near real-time event with historical dataflow path records, dataflow interruptions (i.e., fails) within the control application can be detected. By determining the location of such a dataflow interruption, the root cause of the control application fail can be determined. Additionally, the invention can generate summary reports indicating the status of the control application. These summary reports can further be generated with drill downs to provide a user with direct access to the records upon which the reports were based.

Abstract: Disclosed are embodiments that provide near real-time monitoring of a control application in a manufacturing environment to detect and determine the root cause of faults within the control application. The embodiments monitor the flow of data within the control application during events (i.e., transactions, stages, process steps, etc.). By comparing a dataflow path for a near real-time event with historical dataflow path records, dataflow interruptions (i.e., fails) within the control application can be detected. By determining the location of such a dataflow interruption, the root cause of the control application fail can be determined. Additionally, the invention can generate summary reports indicating the status of the control application. For example, the summary reports can quantify the performance and/or the effectiveness of the control application. These summary reports can further be generated with drill downs to provide a user with direct access to the records upon which the reports were based.

Abstract: Disclosed are embodiments that provide near real-time monitoring of a control application in a manufacturing environment to detect and determine the root cause of faults within the control application. The embodiments monitor the flow of data within the control application during events (i.e., transactions, stages, process steps, etc.). By comparing a dataflow path for a near real-time event with historical dataflow path records, dataflow interruptions (i.e., fails) within the control application can be detected. By determining the location of such a dataflow interruption, the root cause of the control application fail can be determined. Additionally, the invention can generate summary reports indicating the status of the control application. These summary reports can further be generated with drill downs to provide a user with direct access to the records upon which the reports were based.

Abstract: An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor waters as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process to minimize overetch of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine an overetch value. The overetch value may be compared to a desired value to control the etching process.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

Abstract: A removable gas injector design compatible for use in chemical vapor deposition reactors that allows proper mixing of the reactant gases, reduced cycle time associated with cleaning of gas injector components, and elimination of uncertainties associated with manual cleaning of the injector. A better reliability to the system due to the known condition of the nozzle after a clean is achieved.