Abstract: A technique for identifying a defect in an object produced by a controllable process is disclosed. A first type of data generated as a result of production of the object by the controllable process is obtained. A second type of data generated as a result of production of the object by the controllable process is obtained. The first type of data and the second type of data are jointly analyzed. A defect is identified in the object based on the joint analysis of the first type of data and the second type of data.

Abstract: A technique for identifying a defect in an object produced by a controllable process. A first type of data generated as a result of production of the object by the controllable process is obtained. A second type of data generated as a result of production of the object by the controllable process is obtained. The first type of data and the second type of data are jointly analyzed. A defect is identified in the object based on the joint analysis of the first type of data and the second type of data. By way of example, the controllable process comprises a semiconductor manufacturing process such as a silicon wafer manufacturing process and the object produced by the semiconductor manufacturing process comprises a processed wafer. The first type of data comprises tool trace data and the second type of data comprises wafer image data. The tool trace data is generated by a photolithographic tool.

Abstract: A technique for analyzing two or more data streams respectively generated from two or more components of a controllable process includes the following steps. In a first step, a statistical analysis is performed on each of the two or more data streams to generate first analysis results in the form of respective statistical results for the two or more data streams. In a second step, at least a portion of the statistical results from at least one of the two or more data streams is combined with at least a portion of the statistical results from at least another one of the two or more data streams to yield second analysis results. The controllable process is adjustable based on at least one of the first analysis results and the second analysis results.

Abstract: A method (and system) for causal modeling includes modeling a data set. The modeling includes estimating a reverse Bayesian forest for the data set and detecting outliers in a separate data set. Detecting the outliers includes applying the reverse Bayesian forest to the separate data set to obtain a probability value assigned to data points in the separate data set and identifying outliers in the separate data set by evaluating the probability value given by the reverse Bayesian forest.

Abstract: A method and system employing said method for analyzing process module performance in semiconductor manufacturing. The method and system include process modules as part of a process tool. A process initiated in the process module includes steps. Each step includes specified performance parameters. A detection device detects at least one predetermined measurement in the process module. A program and processor generate data about the process module and steps and generates data about the steps and the process module. The program provides statistical analysis of the steps and the environment of the process module using the generated data and the performance parameters. The program determines variations between the process step performance parameters and the generated data about the process steps.

Abstract: A technique for analyzing two or more data streams respectively generated from two or more components of a controllable process includes the following steps. In a first step, a statistical analysis is performed on each of the two or more data streams to generate first analysis results in the form of respective statistical results for the two or more data streams. In a second step, at least a portion of the statistical results from at least one of the two or more data streams is combined with at least a portion of the statistical results from at least another one of the two or more data streams to yield second analysis results. The controllable process is adjustable based on at least one of the first analysis results and the second analysis results.

Abstract: A technique for identifying a defect in an object produced by a controllable process. A first type of data generated as a result of production of the object by the controllable process is obtained. A second type of data generated as a result of production of the object by the controllable process is obtained. The first type of data and the second type of data are jointly analyzed. A defect is identified in the object based on the joint analysis of the first type of data and the second type of data. By way of example, the controllable process comprises a semiconductor manufacturing process such as a silicon wafer manufacturing process and the object produced by the semiconductor manufacturing process comprises a processed wafer. The first type of data comprises tool trace data and the second type of data comprises wafer image data. The tool trace data is generated by a photolithographic tool.

Abstract: A method for wafer manufacturing process abnormalities detection, the method includes: generating a classifier in response to compression based similarities between relevant wafer manufacturing process information of pairs of wafers; and utilizing the classifier to detect wafer manufacturing process abnormalities.

Abstract: A method (and system) for causal modeling includes modeling a data set using a reverse Bayesian forest.

Abstract: Disclosed is a method and system for detecting abnormal plasma discharge that is useful in, for example, detecting plasma leakage in a reactive ion etching (RIE) chamber. The system includes electrical contacts connected to the chamber that provide an input signal to the chamber. This input signal can be generated by a radio frequency (RF) generator that is connected to the electrical contacts. A variable power controller connected to the RF generator gradually increases (ramps) the power of the input signal being supplied to the chamber.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

Abstract: An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor wafers as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate.

Abstract: A method and apparatus for monitoring and controlling reactant vapors prior to chemical vapor deposition (CVD). The reactant vapors are monitored at full concentration without sampling as they are transported to a CVD reactor. Contaminants detected cause a process controller to switch the transport path to direct reactant vapors to a system pump.

Abstract: A process and apparatus for Al.sub.2 O.sub.3 CVD on silicon wafers using aluminum tri-isopropoxide in a high-volume production environment is presented. The conditions required to use ATI in a production environment and provide maximum utilization of ATI are first of all delivery of ATI via direct evaporation. The ATI source bottle is pumped out (bypassing substrates) until propene and isopropanol signals are reduced to 1% of process pressure before start of aluminum oxide deposition. Either IR spectroscopy or mass spectrometry can be used to provide a control signal to the microprocessor controller. Heating the supplied tetramer to 120.degree. C. for two hours assures complete conversion to trimer. The ATI is stored at 90.degree. C. to minimize decomposition during idle periods and allow recovery of trimer upon return to 120.degree. C. for two hours. During periods of demand, the ATI is held at 120.degree. C. to minimize decomposition.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, wherein the at least two electrodes are proximate to but not in contact with the at least one wafer, and further wherein said two electrodes are positioned on the same side of the wafer; and monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.