Abstract: The inventive method enables chips (1) to be separated without damaging them, which have exposed sensitive micromechanical structures, from the group of wafers by means of standard parting-off grinding processes. During the parting-off grinding process, the micromechanical structures are covered with a thermofilm (4) thereby protecting them. The parting-off grinding, referred to as cutting (6) for short, ensues from the front side of the wafer with the aid of cutting marks (5) on the wafer. During this, the protective film (4) is completely cut through. After cutting, heat is used to detach the protective film from the separated chips (8) without leaving remnants thereon and without force acting upon the micromechanical structures. The separated chips are held by a supporting film onto which the semiconductor wafer is drawn before the cutting step (6). The properties of the supporting film are not modified during the heat treatment of the protective film.