Abstract: The present disclosure is directed to a method of cleaning a microelectronic substrate, such as a semiconductor device, by contacting the microelectronic substrate with an amine oxide selected from the group consisting of N,N-dimethylethanolamine N-oxide, triethanolamine N-oxide, ethanamine, 2,2?-oxybis[N,N-dimethyl-,N,N?-dioxide], 1-methylpyrrolidine N-oxide, N,N-dimethylcyclohexylamine N-oxide, and a mixture thereof for a time and at a temperature sufficient to clean the substrate.

Abstract: The present disclosure provides a quaternary ammonium hydroxide solution comprising a reaction product of a polyamine and an organic oxirane. The quaternary ammonium hydroxide solution may be used in various applications, such as in removing chemical residue from a metal or dielectric surface.