Abstract: The present invention provides a photovoltaic cell comprising a photovoltaic conversion layer and a pair of electrodes. The photovoltaic conversion layer, being capable of converting incident light into a plurality hole-electron pairs, comprises a hole transport layer including a plurality of nanodots mixed therein for transporting the holes generated from the photovoltaic effect. The pair of electrodes are coupled respectively to two sides of the photovoltaic conversion layer for conducting holes and electrons. In another embodiment, the present invention further provides a method for forming the photovoltaic cell, wherein the nanodots are mixed in a solution formed of a hole transport material and then a hole transport layer having the nanodots is formed on a conductive substrate. In the photovoltaic cell having nanodots of the present invention, the hole mobility is enhanced so as to improve the efficiency of the photovoltaic cell.

Abstract: The present invention discloses a modified nano-dot and a fabrication method thereof. The modified nano-dot comprises a surface portion having a functional group and a core portion comprising a polymeric metal oxide, polymeric metalloid oxide or polymeric metal alloy oxide. The mean particle size of the modified nano-dot is 1-100 nm, preferably 1-10 nm. The modified nano-dot capable of modulating a carrier flux can be further applied to the element manufacture in the organic semiconductor industry, optoelectronics industry, and solar cell industry.

Abstract: An organic light emitting diode (OLED) with nano-dots and a fabrication method thereof are disclosed. The OLED apparatus comprises a substrate, a first electrically conductive layer, a first emission-auxiliary layer, an emissive layer, a second emission-auxiliary layer and a second electrically conductive layer. Its fabrication method is described below. Nano-dots with functional groups on the surface are incorporated into the emissive layer, the first emission-auxiliary layer or the second emission-auxiliary layer to form a layered electro-luminescent structure. By using the fabrication method, the resultant efficiency of the OLEDs can be markedly enhanced.

Abstract: An organic light-emitting diode (OLED) device and a manufacturing method thereof are provided. The OLED device comprises more than one light emitting layer. The emissive zone is capable to emit red or long wavelength visible light near the cathode, and emit blue or short wavelength visible light near the anode. The device emits visible light with a lower color temperature at low voltages, and emits visible light with a higher color temperature at higher voltages. By adjusting the input voltage, the device is capable to emit white light or other color lights with desired color temperature.

Abstract: The present invention discloses an organic light emitting diode and a method of fabricating the organic light emitting diode. The OLED device includes one or more light emitting layers, and the light emitting layer is composed of one or more light emitting materials and one or more subject materials, and the subject material has a molecular polarity different from the molecular polarity of the light emitting material, such that the light emitting molecules can be self dispersed to emit a darker blue light color or a light color of a longer wavelength.

Abstract: The present invention discloses an organic light emitting diode and a method of fabricating the organic light emitting diode. The OLED device includes one or more light emitting layers, and the light emitting layer is composed of one or more light emitting materials and one or more subject materials, and the subject material has a molecular polarity different from the molecular polarity of the light emitting material, such that the light emitting molecules can be self dispersed to emit a more reddish light color or a light color of a longer wavelength.

Abstract: The present invention has provided a method for fabricating a white-light organic light-emitting diode (OLED) which allows single emitting layers and micro-molecular materials to be formed on the substrate. The white-light OLED includes a white organic emitting layer, a first electrode nearby the first surface of white organic emitting layer, and a second electrode nearby the second surface of white organic emitting layer. The white organic emitting layer is formed by mixing organic light-emitting dyes of white light combination with a micro-molecular substrate via a solution manufacturing process.

Abstract: An organic light emitting diode apparatus and light emitting layer manufacture method thereof are disclosed. The manufacture method for manufacturing the light emitting layer of the OLED comprises the following steps: an acetone or a tetrahydrofuran as an organic solvent is provided to dissolve each luminescent material and each host material respectively. The solution of the luminescent material and the solution of the host material are mixed based on a predetermined material concentration to produce a mixed solution. The mixed solution is then dried by a drying procedure to produce a solid mixed material. Lastly, the solid mixed material is fabricated by vapor deposition to make a light emitting layer.

Abstract: The present invention has provided a method for fabricating a white-light organic light-emitting diode (OLED) which allows single emitting layers and micro-molecular materials to be formed on the substrate. The white-light OLED includes a white organic emitting layer, a first electrode nearby the first surface of white organic emitting layer, and a second electrode nearby the second surface of white organic emitting layer. The white organic emitting layer is formed by mixing organic light-emitting dyes of white light combination with a micro-molecular substrate via a solution manufacturing process.

Abstract: An organic electroluminescent device with the feature of three-wavelength luminescence is provided. The device includes a hole transporting layer, an electron blocking layer, a first host material layer, a second host material layer, a hole blocking layer, and an electron transporting layer placed between an anode and a cathode in turn. In which, the first host material layer has a first guest luminous substance mixed therein for projecting a first color light source (B), while the second host material layer correspondingly has a second guest luminous substance and a third guest luminous substance mixed therein for projecting a second color light source (G) and a third color light source (R), respectively, under the effect of an external bias voltage, wherein said second guest luminous substance or said third guest luminous substance may be a phosphorescence substance.

Abstract: A method for forming electrically conductive bumps on a semiconductor substrate, or a semiconductor wafer and devices formed by the method are disclosed. In the method, a wafer that has an active surface, a plurality of conductive elements formed on the active surface and a passivation layer insulating the plurality of conductive bumps from each other is first provided. A first metal layer is then sputter deposited on top of the plurality of conductive elements and the passivation layer, followed by stencil printing a plurality of bumps of an insulating material on top of each one of the plurality of conductive elements. The plurality of bumps may be heat treated to a temperature of at least 100° C. for a period of at least 10 minutes for stress relief. A second metal layer is then sputter deposited on top of the plurality of bumps and the first metal layer.

Abstract: The present invention discloses an electroluminescent device with a drying film and a method for fabricating the same. The present invention is characterized in that the method comprises: providing a substrate; forming, in sequence from substrate up, a transparent electrode, a luminescent layer, and an opposed electrode; and forming a drying film by providing a raw material composed of barium (Ba), magnesium (Mg) or calcium (Ca) to react with a gaseous reactant composed of oxygen on the surface of the opposed electrode. The drying film composed of barium oxide (BaO), magnesium oxide (MgO) or calcium oxide (CaO) can be employed to absorb the moisture. Therefore, the generation of dark spots can be prevented and the reliability of the device can be improved.

Abstract: An organic electroluminescent device with the feature of three-wavelength luminescence is provided. The device includes a hole transporting layer, an electron blocking layer, a first host material layer, a second host material layer, a hole blocking layer, and an electron transporting layer placed between an anode and a cathode in turn. In which, the first host material layer has a first guest luminous substance mixed therein for projecting a first color light source (B), while the second host material layer correspondingly has a second guest luminous substance and a third guest luminous substance mixed therein for projecting a second color light source (G) and a third color light source (R), respectively, under the effect of an external bias voltage, wherein said second guest luminous substance or said third guest luminous substance may be a phosphorescence substance.

Abstract: The present invention discloses an electroluminescent device with a drying film and a method for fabricating the same. The present invention is characterized in that the method comprises: providing a substrate; forming, in sequence from substrate up, a transparent electrode, a luminescent layer, and an opposed electrode; and forming a drying film by providing a raw material composed of barium (Ba), magnesium (Mg) or calcium (Ca) to react with a gaseous reactant composed of oxygen on the surface of the opposed electrode. The drying film composed of barium oxide (BaO), magnesium oxide (MgO) or calcium oxide (CaO) can be employed to absorb the moisture. Therefore, the generation of dark spots can be prevented and the reliability of the device can be improved.

Abstract: A method for bonding an IC chip formed with corrugated, multi-layered bumps to conductive elements on a substrate and devices formed by such method are disclosed. In the method, multi-layered bumps are formed by a cover layer of a conductive metal deposited on a base layer of a compliant material. The exposed bonding surface of the bump is formed in a corrugated fashion, or in a serrated shape with saw-tooth configurations. The saw-tooth configurations may either be rectangular or triangular. In the bonding method, instead of using an anisotropic conductive film loaded with conductive particles, a solid adhesive film without conductive particles or a liquid adhesive material without conductive particles can be utilized. The serrated bonding surface of the bumps is effective in expelling the adhesive material from the bonding interface between the bumps and the conductive elements such that a low resistance bond can be formed between an IC chip and a substrate.

Abstract: A bonded structure comprising the physical and electrical connections between an integrated circuit element and substrate using a composite bump comprised of a single polymer body of low Young's Modulus and a conductive metal coating. When the bonded structure is formed the composite bump is deformed and the low Young's Modulus of the polymer body allows a very reliable bonded structure with very low bonding force. Due to the low Young's Modulus there is little tendency to separate the connections after the bonded structure is formed. The bond can be formed using thermocompression bonding, ultrasonic bonding, application of heat or application of light. The bond can also be formed using a non conductive adhesive between the integrated circuit element and the substrate. The bond can also be formed with a conductive adhesive coating on the composite bump.

Abstract: A bonded structure comprising the physical and electrical connections between an integrated circuit element and substrate using a composite bump comprised of a single polymer body of low Young's Modulus and a conductive metal coating. The bond can be formed using thermocompression bonding, ultrasonic bonding, application of heat or application of light. The bond can also be formed using a non conductive adhesive between the integrated circuit element and the substrate. The bond can also be formed with a conductive adhesive coating on the composite bump.

Abstract: A composite bump structure and methods of forming the composite bump structure. The composite bump structure comprises a polymer body of relatively low Young's Modulus compared to metals covered by a conductive metal coating formed at the input/output pads of an integrated circuit element or substrate. The composite bump is formed using material deposition, lithography, and etching techniques. A layer of soldering metal can be formed on the composite bumps if this is desired for subsequent processing. A base metal pad covering the integrated circuit element input/output pad can be used to provide added flexibility in location of the composite bump. The composite bump can be formed directly on the input/output pad or on the base metal pad.

Abstract: A composite bump structure and methods of forming the composite bump structure. The composite bump structure comprises a polymer body of relatively low Young's Modulus compared to metals covered by a conductive metal coating formed at the input/output pads of an integrated circuit element or substrate. The composite bump is formed using material deposition, lithography, and etching techniques. A layer of soldering metal can be formed on the composite bumps if this is desired for subsequent processing. A base metal pad covering the integrated circuit element input/output pad can be used to provide added flexibility in location of the composite bump. The composite bump can be formed directly on the input/output pad or on the base metal pad.

Abstract: A composite bump structure and methods of forming the composite bump structure. The composite bump structure comprises a polymer body of relatively low Young's Modulus compared to metals covered by a conductive metal coating formed at the input/output pads of an integrated circuit element or substrate. The composite bump is formed using material deposition, lithography, and etching techniques. A layer of soldering metal can be formed on the composite bumps if this is desired for subsequent processing.