Abstract: A common mode feedback circuit includes a common mode feedback amplifier unit having output signals and a reference signal, and a combining circuit for combining or adjusting the output signals of the common mode feedback amplifier unit, to prevent the output signals from being distorted, and to maintain the output signals of the common mode feedback amplifier unit at the reference signal. The common mode feedback amplifier unit includes a differential amplifier having two differential input terminals and two differential output terminals. The combining circuit includes two sets of gain amplifier to receive and combine the output signals from the common mode feedback circuit and outputs two differential signals.

Abstract: A short-circuit detecting and protecting circuit includes a switching unit for obtaining input signals, a comparator having one input terminal coupled to the switching unit, a control transistor coupled between the switching unit and the other input terminal of the comparator to define input time of the input signals. A circuit may be used to detect a voltage difference between the input terminals of the comparator. The comparator may compare the voltage difference between the input terminals of the comparator and internal voltage of the comparator, to determine a short-circuit or overload situation.

Abstract: A method and circuitry are provided for modularized single transition counting. A count signal is provided on a count line (436). A single transition count is modified in response to the count signal. The single transition count has a plurality of bits (418, 416) provided by at least one first module (404) and at least one second module (406). The first (404) and second (406) modules are alternately coupled in series to an input module (402) so that one (404) of the first and second modules has an input (460a, 466a) coupled to an output (420, 468) of the input module (402) and so that each additional one (406) of the first and second modules has an input (482a, 488a) coupled to an output (472a, 478a) of an associated one (404) of the second and first modules, respectively.

Abstract: A sequential memory (10) includes synchronous write control circuitry (26) and synchronous read control circuitry (22). The synchronous write control circuitry produces an Input Ready (IR) signal synchronous with the WRTCLK signal. The synchronous read control circuitry (22) generates a Output Ready (OR) signal synchronously with the RDCLK signal. A RSAM (read sense amplifier) signal is provided to read the sense amplifier associated with a memory (12) responsive to the RDCLK if a RAMRDY signal indicates that a read from this location may be requested on the next clock cycle.

Abstract: A sequential memory (10) uses interleaved memories (12a-b) with associated output buffers (22a-b) accomplish high data rates. Data access control circuitry (18) and bank select circuitry (20) control the order in which the memory banks (12a-b) are written to and read from. Output buffer circuits (22a-b) allow a data word to be read instantaneously after it is written to the sequential memory (10).

Abstract: A data access controller (10) is comprised of a control circuit (12) and an output data latch (14). The control circuit (12) receives a READ and WRITE signal (30,32) and produces a plurality of control signals (22). The output data latch (14) allows either incoming data (24) or data from a memory (16) to be propagated to the output for data access depending on the state of the control signals. The data access controller (10) enables faster data access of first in, first out memory structures.

Abstract: In a method and circuitry for variable single transition counting, a count signal (178) is provided on a count line. A direction control bit (264) is output on a direction control line. A significant bit (278e) is output on a significant bit line. A first single transition count (278a-d) is incremented in response to the count signal (178) and to the direction control bit (264) having an incrementing logic state. The first single transition count (278a-d) is decremented in response to the count signal (178) and to the direction control bit (264) having a decrementing logic state. The first single transition count (278a-d) and the significant bit (278e) together form a second single transition count (278a-e). The second single transition count (278a-e) is compared against a preselected value (296), and a comparison signal (320) is output in response to the second single transition count (278a-e) being equal to the preselected value (296 ).

Abstract: A look-ahead flag generator generates a flag signal corresponding to the occurrence of a predetermined value stored in a counter (10). The output of the counter outputs any of a plurality of values, the values including the predetermined value and at least one boundary value that is one unit of increment or decrement displaced from the predetermined value. A clock signal source (13) is coupled to a first input of the counter (10) to indicate a decrement or an increment to the value stored in the counter (10). An up/down signal source (11) is coupled to a second input of the counter to indicate whether an increment or a decrement of the stored value should be performed. Predetermined states of the up/down signal and the clock signal are operable to cause a boundary value stored in the counter (10) to be changed to the predetermined value. A predecoder (12) is coupled to an output of counter (10) for decoding the boundary value. A latch (132) stores the decoded boundary value.

Abstract: An arbiter (52) is operable to supply an up/down signal (11) and a clock signal (13) to an up/down counter (10) so that the up/down counter (10) can count the difference between read requests (54) and write requests (56) experienced by an associated FIFO memory.The arbiter (52) is operable to receive asynchronous read and write requests (54, 56) that are closely spaced in time or appear simultaneously, and to store the read request in a read latch (104) and the write request in a write latch (92). A decision circuit (62) is operable to determine priority between the read and write requests, and processes the request that is awarded priority. Once the first priority request has been processed, the stored non-priority request is then processed.

Abstract: A solid state memory system is arranged in a plurality of blocks of memory cells, the memory cells in each block arranged in columns and rows. When the memory system is addressed for a memory reference, block selection circuitry selects one block of the plurality of blocks, excluding all of the other blocks. Each block has a set of sense amplifiers, corresponding in number to the number of bits in the output word. Each sense amplifier is connected to an isolation switch. The outputs from the sense amplifiers connected to the non-selected blocks are thereby isolated from the sense amplifier outputs from the selected block to minimize loading of the sense amplifier outputs from the selected block. The memory cells in each block are interconnected by metal row conductors and by metal column conductors.

Abstract: An arbiter (52) is operable to supply an up/down signal (11) and a clock signal (13) to an up/down counter (10) so that the up/down counter (10) can count the difference between read requests (54) and write requests (56) experienced by an associated FIFO memory.The arbiter (52) is operable to receive asynchronous read and write requests (54, 56) that are closely spaced in time or appear simultaneously, and to store the read request in a read latch (104) and the write request in a write latch (92). A decision circuit (62) is operable to determine priority between the read and write requests, and processes the request that is awarded priority. Once the first priority request has been processed, the stored second non-priority request is then processed.

Abstract: A CMOS output pair provides rapid switching speed while avoiding excessive noise levels developed across the power supply parasitic inductance. Both the P-channel and N-channel transistors of the output pair actually comprise a plurality of sub-transistors with their source to drain current paths connected in parallel. As a result of novel RC coupling of a switching signal from gate to gate of either of the plurality of sub-transistors, the sub-transistors are caused to turn on sequentially. Since none of the sub-transistors is capable of supporting the current that must be carried by the totality of sub-transistors making up either the P-channel or N-channel transistor, the increments of current as each sub-transistor turns on are small relative to the total.