Abstract: A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n?1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.

Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

Abstract: A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.

Abstract: A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.

Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

Abstract: Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.

Abstract: Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.

Abstract: The light brightness of a semiconductor LED is increased by employing a light transmitting window comprising ZnO. In another embodiment, current crowding is reduced, efficiency increased and reliability (lifetime) increased by forming a thin semiconductor transition layer to reduce contact resistance between an overlying transparent window layer and an underlying transparent current diffusion layer formed on a double heterostructure light generation region. Optimum performance is achieved employing the transition layer with a ZnO transparent window layer.

Abstract: Contamination of aluminum-containing compound semiconductors is greatly reduced by an improved method for manufacturing the semiconductors, wherein the growing semiconductor crystal is doped with a predetermined concentration of selenium. The method of the present invention can be used to reduce contaminants in both p-type and n-type semiconductors.