Patents by Inventor Jyh-Chung Wen

Jyh-Chung Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050176264
    Abstract: A process of forming silicon-based nanowires heats high-surface-oxygen-content silicon powders to initiate vapor-solid reaction to form nanowires. The reaction gas is charged to react with the Si powders to form the silicon-based nanowires such as silicon nanowires or SiC nanowires. With control of the reaction gas, the components of the nanowires can be exactly controlled without the addition of metallic catalysts. Thereby, the nanowires can be made with reduced cost.
    Type: Application
    Filed: August 16, 2004
    Publication date: August 11, 2005
    Inventors: Ming-Shyong Lai, Chih-Jen Lin, Hung-Cheng Chen, Jyh-Chung Wen
  • Patent number: 6635219
    Abstract: A method of regenerating a phase-change sputtering target for optical storage media. First, a used powder-metallurgy sputtering target composed of a target material, an adhesion material, and a backing plate is recycled. Then, the target material is separated from the backing plate. Then, the target adhesion material is scraped from the recycled target material Thereafter, the surface of the recycled target material is processed. Finally, the backing plate, a new adhesion material, the recycled target material, and new powders are placed in a vacuum thermal-pressure furnace in sequence to perform a thermal-pressure sintering process.
    Type: Grant
    Filed: March 12, 2002
    Date of Patent: October 21, 2003
    Assignee: Industrial Technology Research Institute
    Inventors: Jyh-Chung Wen, Ming-Shyong Lai, Bean-Jon Li
  • Publication number: 20020130041
    Abstract: A method of regenerating a phase-change sputtering target for optical storage media. First, a used powder-metallurgy sputtering target composed of a target material, an adhesion material, and a backing plate is recycled. Then, the target material is separated from the backing plate. Then, the target adhesion material is scraped from the recycled target material Thereafter, the surface of the recycled target material is processed. Finally, the backing plate, a new adhesion material, the recycled target material, and new powders are placed in a vacuum thermal-pressure furnace in sequence to perform a thermal-pressure sintering process.
    Type: Application
    Filed: March 12, 2002
    Publication date: September 19, 2002
    Inventors: Jyh-Chung Wen, Ming-Shyong Lai, Bean-Jon Li