Patents by Inventor Jyh-Shinn YANG

Jyh-Shinn YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ring-shaped magnetoresistive memory device and writing method thereof
    Patent number: 9159394
    Abstract: A ring-shaped magnetoresistive memory device includes a ring-shaped magnetoresistive memory cell, a first conductor, and a second conductor. The first conductor is positioned on a first surface of the ring-shaped magnetoresistive memory cell for generating a first magnetic field pulse. The second conductor is positioned on a second surface of the ring-shaped magnetoresistive memory cell for generating a second magnetic field pulse. The first surface is opposite to the second surface. An extension direction of the first conductor is perpendicular to an extension direction of the second conductor. A time delay is between the first magnetic field pulse and the second magnetic field pulse.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: October 13, 2015
    Assignee: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jyh-Shinn Yang, Ching-Ming Lee, Te-Ho Wu
  • RING-SHAPED MAGNETORESISTIVE MEMORY DEVICE AND WRITING METHOD THEREOF
    Publication number: 20150023092
    Abstract: A ring-shaped magnetoresistive memory device includes a ring-shaped magnetoresistive memory cell, a first conductor, and a second conductor. The first conductor is positioned on a first surface of the ring-shaped magnetoresistive memory cell for generating a first magnetic field pulse. The second conductor is positioned on a second surface of the ring-shaped magnetoresistive memory cell for generating a second magnetic field pulse. The first surface is opposite to the second surface. An extension direction of the first conductor is perpendicular to an extension direction of the second conductor. A time delay is between the first magnetic field pulse and the second magnetic field pulse.
    Type: Application
    Filed: May 1, 2014
    Publication date: January 22, 2015
    Applicant: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jyh-Shinn YANG, Ching-Ming LEE, Te-Ho WU