Abstract: A wheel assembly comprises a wheel-mounting base, a wheel, an axle, and two fixing members. The wheel-mounting base comprises a compartment that is delimited by two sidewalls having aligned axle holes. The axle extends through the axle holes of the wheel-mounting base and an axle hole of the wheel received in the compartment. The fixing members are respectively mounted to the sidewalls of the wheel-mounting base. Each fixing member comprises an axle-receiving hole for securely engaging with an associated one of the ends of the axle. Each fixing member is movable between a first angular position in which the fixing member is disengagable from an associated one of the sidewalls of the wheel-mounting base and a second angular position in which the fixing member is securely engaged with the associated one of the sidewalls of the wheel-mounting base.

Abstract: A shallow trench isolated FET LDD structure that has a low probability of short circuiting at the silicon to trench interface or between the source or drain and the gate (because of a titanium silicide bridge) is described. It is based on an isolation trench having a top portion with vertical sides and a lower portion with sloping sides. With the filled trench in place, along with a polysilicon gate and gate oxide, the thinner, lightly doped, N type layer is formed using ion implantation. Spacers are then formed on the gate but, prior to the second ion implant step, a few hundred Angstroms of silicon is selectively removed from the surface. This causes the trench filler material to extend above the wafer surface and the spacers to extend above the gate. A deeper, more strongly N-type, layer is then formed in the usual way, followed by the standard SALICIDE process for making contact to source, gate, and drain.

Abstract: A shallow trench isolated FET LDD structure that has a low probability of short circuiting at the silicon to trench interface or between the source or drain and the gate (because of a titanium silicide bridge) is described. It is based on an isolation trench having a top portion with vertical sides and a lower portion with sloping sides. With the filled trench in place, along with a polysilicon gate and gate oxide, the thinner, lightly doped, N type layer is formed using ion implantation. Spacers are then formed on the gate but, prior to the second ion implant step, a few hundred Angstroms of silicon is selectively removed from the surface. This causes the trench filler material to extend above the wafer surface and the spacers to extend above the gate. A deeper, more strongly N-type, layer is then formed in the usual way, followed by the standard SALICIDE process for making contact to source, gate, and drain.

Abstract: The present invention relates to an improved structure for key chain, comprising a main body having a thread at the upper end to enable it to be screwed onto the bottom end of a fixed seat, and the main body further having a chamber therein for receiving a disk spring and a top ring that is inserted onto the main body, and the disk spring is held with a conical body on the bottom of the top ring, and a key fastener held by the disk spring is then inserted. When the key fastener is intended for removal, pushing up the top ring will cause the conical body on the bottom of the top ring to prop open the sheet cones of the disk spring, and the key fastener can be removed.