Patents by Inventor Jyong-Fong Liao

Jyong-Fong Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solar cell defect passivation method
    Patent number: 8062964
    Abstract: The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.
    Type: Grant
    Filed: August 9, 2010
    Date of Patent: November 22, 2011
    Assignee: Atomic Energy Council
    Inventors: Wen-Fa Tsai, Jyong-Fong Liao, Yen-Yu Chen, Chee Wee Liu, Chi-Fong Ai
  • Solar Cell Defect Passivation Method
    Publication number: 20110053351
    Abstract: The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.
    Type: Application
    Filed: August 9, 2010
    Publication date: March 3, 2011
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Wen-Fa Tsai, Jyong-Fong Liao, Yen-Yu Chen, Chee Wee Liu, Chi-Fong Ai