Abstract: Disclosed herein are devices and method for realizing field-free deterministic switching of a perpendicularly polarized magnet using SOTs in a quantum material with low-symmetry crystal structure. In preferred embodiments, SOT devices are fabricated using a perpendicularly polarized van der Waals (vdW) based layered quantum material platform and thin films of WTe2 are used as a spin-source material for generating the SOTs for magnetic memory and spin logic devices.

Abstract: A spintronic device is disclosed. The spintronic device includes a spin current transport layer, a spin injector, and a spin detector. The spin injector includes a first tunnel barrier layer made of strontium oxide (SrO) disposed over the spin current transport layer and a first magnetic material layer disposed over the first tunnel barrier layer. The spin detector includes a second tunnel barrier layer made of SrO disposed over the spin current transport layer. A second magnetic material layer is disposed over the second tunnel barrier layer and a spin sensor has a sensor input terminal coupled to the second magnetic material layer.