Patents by Inventor Jyun-Hao CHANG

Jyun-Hao CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240020456
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect (LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Application
    Filed: July 31, 2023
    Publication date: January 18, 2024
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Patent number: 11755815
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect(LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Grant
    Filed: October 27, 2022
    Date of Patent: September 12, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Publication number: 20230230971
    Abstract: A method of forming an integrated circuit includes placing a first and a second standard cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on at least the first or second standard cell layout design. The first standard cell layout design has a first height. The second standard cell layout design has a second height. Placing the first standard cell layout design includes placing a first set of pin layout patterns on a first layout level over a first set of gridlines, extending in a first direction, and having a first width in a second direction. Placing the second standard cell layout design includes placing a second set of pin layout patterns on the first layout level over a second set of gridlines, extending in the first direction, and having a second width in the second direction.
    Type: Application
    Filed: March 27, 2023
    Publication date: July 20, 2023
    Inventors: Chun-Yao KU, Wen-Hao CHEN, Kuan-Ting CHEN, Ming-Tao YU, Jyun-Hao CHANG
  • Patent number: 11675954
    Abstract: A method of designing a device includes identifying a pin to be inserted into a first layer of the device, wherein the first layer has a plurality of first routing tracks, and each of the plurality of first routing tracks extend in a first direction. The method further includes identifying a blocking shape on a second layer different from the first layer, wherein the second layer has a plurality of second routing tracks, and each of the plurality of second routing tracks extends in a second direction different from the first direction. The method further includes determining at least one candidate location for the pin in the first layer based on the plurality of first routing tracks of the first layer. The method further includes setting a location for the pin in the first layer based on the determined at least one candidate location.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: June 13, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sheng-Hsiung Chen, Jyun-Hao Chang, Ting-Wei Chiang, Fong-Yuan Chang, I-Lun Tseng, Po-Hsiang Huang
  • Patent number: 11616055
    Abstract: A method of forming an integrated circuit includes generating a first and second standard cell layout design, and manufacturing the integrated circuit based on at least the first or second standard cell layout design. The first standard cell layout design has a first height. The second standard cell layout design has a second height different from the first height. The second standard cell layout design is adjacent to the first standard cell layout design. Generating the first standard cell layout design includes generating a first set of pin layout patterns extending in a first direction, being on a first layout level, and having a first width. Generating the second standard cell layout design includes generating a second set of pin layout patterns extending in the first direction, being on the first layout level, and having a second width different from the first width.
    Type: Grant
    Filed: November 11, 2020
    Date of Patent: March 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Yao Ku, Wen-Hao Chen, Kuan-Ting Chen, Ming-Tao Yu, Jyun-Hao Chang
  • Publication number: 20230058814
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect(LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Application
    Filed: October 27, 2022
    Publication date: February 23, 2023
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Patent number: 11514224
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect (LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Grant
    Filed: February 19, 2021
    Date of Patent: November 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Patent number: 11281836
    Abstract: A semiconductor device includes active areas formed as predetermined shapes on a substrate. The device also includes a first structure having at least two contiguous rows including: at least one instance of the first row, and at least one instance of the second row. The device also includes the first structure being configured such that: each of the at least one instance of the first row in the first structure having a first width in the first direction; and each of the at least one instance of the second row in the first structure having a second width in the first direction, the second width being substantially different than the first width. The device also includes a second structure having an odd number of contiguous rows including: an even number of instances of the first row, and an odd number of instances of the second row.
    Type: Grant
    Filed: April 5, 2021
    Date of Patent: March 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fong-Yuan Chang, Jyun-Hao Chang, Sheng-Hsiung Chen, Ho Che Yu, Lee-Chung Lu, Ni-Wan Fan, Po-Hsiang Huang, Chi-Yu Lu, Jeo-Yen Lee
  • Patent number: 11132488
    Abstract: A method of modifying a cell includes determining a number of pins in a maximum overlapped pin group region. The method further includes determining a number of routing tracks within a span region of the maximum overlapped pin group region. The method further includes comparing the number of pins and the number of routing tracks within the span region to determine a global tolerance of the cell. The method further includes increasing a length of at least one pin of the maximum overlapped pin group in response to the global tolerance failing to satisfy a predetermined threshold.
    Type: Grant
    Filed: January 29, 2020
    Date of Patent: September 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sheng-Hsiung Chen, Jyun-Hao Chang, Ting-Wei Chiang, Fong-Yuan Chang, I-Lun Tseng, Po-Hsiang Huang
  • Publication number: 20210248300
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect (LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Application
    Filed: February 19, 2021
    Publication date: August 12, 2021
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Publication number: 20210224460
    Abstract: A semiconductor device includes active areas formed as predetermined shapes on a substrate. The device also includes a first structure having at least two contiguous rows including: at least one instance of the first row, and at least one instance of the second row. The device also includes the first structure being configured such that: each of the at least one instance of the first row in the first structure having a first width in the first direction; and each of the at least one instance of the second row in the first structure having a second width in the first direction, the second width being substantially different than the first width. The device also includes a second structure having an odd number of contiguous rows including: an even number of instances of the first row, and an odd number of instances of the second row.
    Type: Application
    Filed: April 5, 2021
    Publication date: July 22, 2021
    Inventors: Fong-Yuan CHANG, Jyun-Hao CHANG, Sheng-Hsiung CHEN, Ho Che YU, Lee-Chung LU, Ni-Wan FAN, Po-Hsiang HUANG, Chi-Yu LU, Jeo-Yen LEE
  • Patent number: 11030383
    Abstract: A method of forming an integrated device includes: providing a first via pillar file specifying a first via pillar; providing a second via pillar file specifying a second via pillar; arranging, by a processor, the first via pillar to electrically connect to a circuit cell in a first circuit; arranging an interconnecting path for electrical connection of the first via pillar to another circuit cell in the first circuit; arranging, by the processor, the second via pillar to replace the first via pillar when the first via pillar induces an electromigration (EM) phenomenon; re-routing the interconnecting path with replacement of the first via pillar to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Yao Ku, Wen-Hao Chen, Ming-Tao Yu, Shao-Huan Wang, Jyun-Hao Chang
  • Patent number: 10970450
    Abstract: A semiconductor device comprising active areas and a structure. The active areas are formed as predetermined shapes on a substrate and arranged relative to a grid having first and second tracks which are substantially parallel to corresponding orthogonal first and second directions; The active areas are organized into instances of a first row having a first conductivity and a second row having a second conductivity. Each instance of the first row and of the second row includes a corresponding first and second number predetermined number of the first tracks. The structure has at least two contiguous rows including: at least one instance of the first row; and at least one instance of the second row. In the first direction, the instance(s) of the first row have a first width and the instance(s) of the second row a second width substantially different than the first width.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: April 6, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fong-Yuan Chang, Jyun-Hao Chang, Sheng-Hsiung Chen, Ho Che Yu, Lee-Chung Lu, Ni-Wan Fan, Po-Hsiang Huang, Chi-Yu Lu, Jeo-Yen Lee
  • Patent number: 10956650
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect (LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: March 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Publication number: 20210034807
    Abstract: A method of designing a device includes identifying a pin to be inserted into a first layer of the device, wherein the first layer has a plurality of first routing tracks, and each of the plurality of first routing tracks extend in a first direction. The method further includes identifying a blocking shape on a second layer different from the first layer, wherein the second layer has a plurality of second routing tracks, and each of the plurality of second routing tracks extends in a second direction different from the first direction. The method further includes determining at least one candidate location for the pin in the first layer based on the plurality of first routing tracks of the first layer. The method further includes setting a location for the pin in the first layer based on the determined at least one candidate location.
    Type: Application
    Filed: October 20, 2020
    Publication date: February 4, 2021
    Inventors: Sheng-Hsiung CHEN, Jyun-Hao CHANG, Ting-Wei CHIANG, Fong-Yuan CHANG, I-Lun TSENG, Po-Hsiang HUANG
  • Publication number: 20200411503
    Abstract: An integrated circuit includes a first region. The integrated circuit further includes a first conductive structure in the first region, wherein the first conductive structure extends in a first direction. The integrated circuit further includes a second region adjacent to the first region. The integrated circuit further includes a power structure configured to supply a voltage to the first region or the second region, wherein the power structure includes a second conductive structure overlapping a boundary between the first region and the second region, the first conductive structure and the second conductive structure are aligned in a second direction different than the first direction, and the first conductive structure and the second conductive structure are separated from each other in the first direction.
    Type: Application
    Filed: September 16, 2020
    Publication date: December 31, 2020
    Inventors: Fong-Yuan CHANG, Jyun-Hao CHANG, Sheng-Hsiung CHEN, Po-Hsiang HUANG, Lipen YUAN
  • Patent number: 10797041
    Abstract: An integrated circuit includes a first region and a first conductive structure in the first region, wherein the first conductive structure extends in a first direction. The integrated circuit further includes a first via coupled to the first conductive structure. The integrated circuit further includes a second region adjacent to the first region. The integrated circuit further includes a power structure configured to supply a voltage to the first or second region. The power structure includes a second conductive structure extending in the first direction and overlapping a boundary between the first region and the second region. The first conductive structure and the second conductive structure are aligned in a second direction. The first conductive structure and the second conductive structure are separated from each other in the first direction by a distance greater than a minimum spacing requirement of the first conductive structure and the second conductive structure.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: October 6, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fong-Yuan Chang, Jyun-Hao Chang, Sheng-Hsiung Chen, Po-Hsiang Huang, Lipen Yuan
  • Patent number: 10777505
    Abstract: A method includes using a processor to placing a cell having a first conductive feature and a second conductive feature on an integrated circuit layout. A length of the first conductive feature is extended, by using the processor, to form a staggered configuration. A set of instructions for manufacturing an integrated circuit based upon the integrated circuit layout is generated, and the set of instructions is stored in a non-transitory machine readable storage medium.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fong-Yuan Chang, Sheng-Hsiung Chen, Po-Hsiang Huang, Jyun-Hao Chang, Chun-Chen Chen
  • Publication number: 20200285798
    Abstract: A method of forming an integrated device includes: providing a first via pillar file specifying a first via pillar; providing a second via pillar file specifying a second via pillar; arranging, by a processor, the first via pillar to electrically connect to a circuit cell in a first circuit; arranging an interconnecting path for electrical connection of the first via pillar to another circuit cell; arranging, by the processor, the second via pillar to replace the first via pillar when the first via pillar induces an electromigration (EM) phenomenon; re-routing the interconnecting path with replacement of the first via pillar to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.
    Type: Application
    Filed: May 26, 2020
    Publication date: September 10, 2020
    Inventors: CHUN-YAO KU, WEN-HAO CHEN, MING-TAO YU, SHAO-HUAN WANG, JYUN-HAO CHANG
  • Patent number: 10678991
    Abstract: A method of forming an integrated device includes: pre-storing a plurality of via pillars in a storage tool; arranging a first via pillar selected from the plurality of via pillars to electrically connect to a circuit cell in a first circuit; analyzing electromigration (EM) information of the first circuit to determine if the first via pillar induces an EM phenomenon; arranging a second via pillar selected from the plurality of via pillars to replace the first via pillar of the circuit cell to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: June 9, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Yao Ku, Wen-Hao Chen, Ming-Tao Yu, Shao-Huan Wang, Jyun-Hao Chang