Patents by Inventor Jyun-Kai Chu

Jyun-Kai Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THRESHOLD VOLTAGE MEASUREMENT DEVICE
    Publication number: 20130301343
    Abstract: A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.
    Type: Application
    Filed: August 29, 2012
    Publication date: November 14, 2013
    Inventors: Ching-Te Chuang, Shyh-Jye Jou, Geng-Cing Lin, Shao-Cheng Wang, Yi-Wei Lin, Ming-Chien Tsai, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee, Jyun-Kai Chu
  • Threshold voltage measurement device
    Patent number: 8582378
    Abstract: A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: November 12, 2013
    Assignee: National Chiao Tung University
    Inventors: Ching-Te Chuang, Shyh-Jye Jou, Geng-Cing Lin, Shao-Cheng Wang, Yi-Wei Lin, Ming-Chien Tsai, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee, Jyun-Kai Chu