Abstract: A substrate container with enhanced flow field therein includes a box, at least one offset inflation mechanism and at least one gas diffusion mechanism. The offset inflation mechanism is disposed outside internal receiving space of the box. The offset inflation mechanism has a gaseous chamber extending in the same direction as a bottom panel. The gas diffusion mechanism includes a base, a partition wall and at least one diffusion member. The base masks an outlet of the gaseous chamber to form an auxiliary gaseous chamber. The partition wall extends perpendicularly to the bottom panel to form a vertical first gas channel in communication with the auxiliary gaseous chamber. The diffusion member and the partition wall together define a second gas channel. The partition wall has at least one gap whereby the first gas channel and the second gas channel are in communication with each other.

Abstract: The present invention provides a semiconductor container which is made of composite material. The composite material is selected from a group consisting of a graphene material doped cycloolefin copolymer (COC), a graphene material doped cycloolefin polymer (COP) and a graphene material doped cyclic block copolymer (CBC). The content of the graphene material ranges from 0.6% to 8.0% by weight in each composite material.

Abstract: The present invention provides a semiconductor container which is made of composite material. The composite material is selected from a group consisting of a graphene material doped cycloolefin copolymer (COC), a graphene material doped cycloolefin polymer (COP) and a graphene material doped cyclic block copolymer (CBC). The content of the graphene material ranges from 0.6% to 8.0% by weight in each composite material.