Patents by Inventor JYUN-YU TIAN

JYUN-YU TIAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SRAM STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20220254789
    Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.
    Type: Application
    Filed: April 25, 2022
    Publication date: August 11, 2022
    Inventors: MING-CHANG WEN, KUO-HSIU HSU, JYUN-YU TIAN, WAN-YAO WU, CHANG-YUN CHANG, HUNG-KAI CHEN, LIEN JUNG HUNG
  • SRAM structure and method for forming the same
    Patent number: 11315933
    Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: April 26, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Chang Wen, Kuo-Hsiu Hsu, Jyun-Yu Tian, Wan-Yao Wu, Chang-Yun Chang, Hung-Kai Chen, Lien Jung Hung
  • SRAM STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20200006354
    Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.
    Type: Application
    Filed: April 5, 2019
    Publication date: January 2, 2020
    Inventors: MING-CHANG WEN, KUO-HSIU HSU, JYUN-YU TIAN, WAN-YAO WU, CHANG-YUN CHANG, HUNG-KAI CHEN, LIEN JUNG HUNG