Patents by Inventor Jyun-Yuan Jeng

Jyun-Yuan Jeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hybrid organic solar cell with perovskite structure as absorption material and manufacturing method thereof
    Patent number: 9082992
    Abstract: A hybrid organic solar cell (HOSC) with perovskite structure as absorption material and a manufacturing method thereof are provided. The HOSC includes a conductive substrate, a hole transport layer, an active layer, a hole blocking layer and a negative electrode. The active layer has a light absorption layer (LAL) and an electron acceptor layer (EAL). The LAL is made of perovskite material represented by the following equation: CnH2n+1NH3XY3, n is positive integer form 1 to 9; X is Pb, Sn or Ge; and Y is at least one of I, Br or Cl. The EAL is made of at least one type of fullerene or derivatives thereof. A planar heterojunction (PHJ) is formed between the LAL and the EAL. The LAL has simple structure and fabricating process with relatively low cost, so that it is advantageous to carry out the mass production of HOSCs of flexible solid-state form.
    Type: Grant
    Filed: July 21, 2013
    Date of Patent: July 14, 2015
    Assignee: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Tzung-Fang Guo, Jyun-Yuan Jeng, Yi-Fang Chiang, Mu-Huan Lee, Chao-Yu Chen
  • HYBRID ORGANIC SOLAR CELL WITH PEROVSKITE STRUCTURE AS ABSORPTION MATERIAL AND MANUFACTURING METHOD THEREOF
    Publication number: 20140332078
    Abstract: A hybrid organic solar cell (HOSC) with perovskite structure as absorption material and a manufacturing method thereof are provided. The HOSC includes a conductive substrate, a hole transport layer, an active layer, a hole blocking layer and a negative electrode. The active layer has a light absorption layer (LAL) and an electron acceptor layer (EAL). The LAL is made of perovskite material represented by the following equation: CnH2n+1NH3XY3, n is positive integer form 1 to 9; X is Pb, Sn or Ge; and Y is at least one of I, Br or Cl. The EAL is made of at least one type of fullerene or derivatives thereof. A planar heterojunction (PHJ) is formed between the LAL and the EAL. The LAL has simple structure and fabricating process with relatively low cost, so that it is advantageous to carry out the mass production of HOSCs of flexible solid-state form.
    Type: Application
    Filed: July 21, 2013
    Publication date: November 13, 2014
    Applicant: National Cheng Kung University
    Inventors: Tzung-Fang Guo, Jyun-Yuan Jeng, Yi-Fang Chiang, Mu-Huan Lee, Chao-Yu Chen