Abstract: A multiplexer includes a transmit filter including first acoustic wave resonators connected to a first path between a common terminal and a transmit terminal, one or some first acoustic wave resonators of the first acoustic wave resonators being provided on a first substrate, and a remaining first acoustic wave resonator being provided on a second substrate, and a receive filter including second acoustic wave resonators connected to a second path between the common terminal and a receive terminal, one or some second acoustic wave resonators of the second acoustic wave resonators being provided on the first substrate and a remaining second acoustic wave resonator being provided on the second substrate, and a resonator closest to the receive terminal in a plan view among the one or some first and second acoustic wave resonators being a second acoustic wave resonator of the one or some second acoustic wave resonators.

Abstract: A filter includes a support substrate, a piezoelectric layer, one or more series resonators connected in series between input and output terminals, each having first electrode fingers having a first average pitch, one or more parallel resonators having one end connected to a path and another end connected to a ground, each having second electrode fingers having a second average pitch more than a maximum first average pitch, another resonator having one end connected to the path, and having third electrode fingers having a third average pitch less than or equal to an intermediate value between the maximum first average pitch and a minimum second average pitch, and an inductor having one end connected to the another resonator and another end connected to the ground, and having an inductance more than a maximum inductance of another inductor connected between the parallel resonators and the ground.

Abstract: An acoustic wave device includes a first substrate, an acoustic wave element provided on a first surface of the piezoelectric layer, a second substrate, a first metal layer provided on the first surface and conductively connected to the acoustic wave element, a second metal layer provided on a second surface of the second substrate, a third metal layer that connects the first metal layer to the second metal layer, is thicker than the first metal layer and the second metal layer, and contains copper or silver, and a first conductive layer that covers a side surface of the third metal layer, and a third surface of the first metal layer in a region surrounding another region where the third metal layer is bonded to the first metal layer, is thinner than the third metal layer, and contains a component other than copper, silver, and tin as a main component.

Abstract: An acoustic wave filter includes: a piezoelectric substrate; series resonators connected in series and located on the piezoelectric substrate, each of the series resonators including first electrode fingers that are arranged with a first duty ratio and excite an acoustic wave; parallel resonators connected in parallel and located on the piezoelectric substrate, each of the parallel resonators including second electrode fingers that are arranged with a second duty ratio and excite an acoustic wave, the second duty ratio in at least one parallel resonator being less than the first duty ratio in at least one series resonator; and a dielectric film that has a temperature coefficient of elastic modulus that is opposite in sign to that of the piezoelectric substrate, is located on the piezoelectric substrate so as to cover the first and second electrode fingers, has a film thickness greater than those of the first and second electrode fingers.

Abstract: An acoustic wave device includes a first substrate having first and second surfaces opposite from each other, and side surfaces connecting the first and second surfaces, a first acoustic wave element disposed on the first surface of the first substrate, a second substrate that is provided over the first surface of the first substrate and over the first acoustic wave element and has a first air gap between the second and first substrates, a second acoustic wave element disposed on the second substrate, a ground terminal disposed on the second surface of the first substrate, a first metal layer provided between the first and second acoustic wave elements and located in the first air gap, and a second metal layer that covers half or more of a total area of the side surfaces of the first substrate and electrically connects the first metal layer and the ground terminal.

Abstract: An acoustic wave filter includes: a piezoelectric substrate; series resonators connected in series and located on the piezoelectric substrate, each of the series resonators including first electrode fingers that are arranged with a first duty ratio and excite an acoustic wave; parallel resonators connected in parallel and located on the piezoelectric substrate, each of the parallel resonators including second electrode fingers that are arranged with a second duty ratio and excite an acoustic wave, the second duty ratio in at least one parallel resonator being less than the first duty ratio in at least one series resonator; and a dielectric film that has a temperature coefficient of elastic modulus that is opposite in sign to that of the piezoelectric substrate, is located on the piezoelectric substrate so as to cover the first and second electrode fingers, has a film thickness greater than those of the first and second electrode fingers.