Abstract: To prevent or alleviate the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package for mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a low strength. A package for semiconductor devices is formed as a laminate of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon the other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole region or some region(s) of the insulating resin layers of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: To prevent or alleviate the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package for mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a low strength. A package for semiconductor devices is formed as a laminate of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon the other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole region or some region(s) of the insulating resin layers of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: To prevent or alleviate the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package for mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a low strength. A package for semiconductor devices is formed as a laminate of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon the other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole region or some region(s) of the insulating resin layers of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: To prevent or alleviate the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package for mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a low strength. A package for semiconductor devices is formed as a laminate of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon the other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole region or some region(s) of the insulating resin layers of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: To prevent the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a small strength. A package for semiconductor devices is formed as a laminate (20) of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole regions or some regions of the insulating resin layers (20d to 20f) of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting a semiconductor element thereon and another face for external connection terminals, the face for mounting a semiconductor device being provided with pads through which the substrate is connected to a semiconductor element to be mounted thereon, and the face for external connection terminals being provided with pads through which the substrate is connected to an external electrical circuit, wherein a reinforcing sheet is respectively joined to the face for mounting a semiconductor element thereon and the face for external connection terminals of the multilayered substrate body.

Abstract: A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting a semiconductor element thereon and another face for external connection terminals, the face for mounting a semiconductor device being provided with pads through which the substrate is connected to a semiconductor element to be mounted thereon, and the face for external connection terminals being provided with pads through which the substrate is connected to an external electrical circuit, wherein a reinforcing sheet is respectively joined to the face for mounting a semiconductor element thereon and the face for external connection terminals of the multilayered substrate body.

Abstract: A wiring substrate with bumps protruding from a surface of the substrate covers one side of a metallic base with an electrical insulating film thereon, having open holes exposing the base, etching the base through the open holes to form concavities in the base, electroplating the interior faces of the concavities to form a barrier metal film thereon filling the concavities with a bump material by electroplating, and forming a barrler layer on the bump material in each concavity. A stack of wiring patterns is formed on the insulating film, adjacent wiring patterns being separated by a respective intervening insulating layer and being electrically connected to each other through vias in the intervening insulating layer, and to the bump material filled in the concavities. Thereafter, the base and barrier metal film are removed.

Abstract: The invention relates a method for producing a multilayer circuit board (50) for a semiconductor device, comprising using a composite metal sheet (14) in which two metal sheets are combined, forming, on each side of the composite metal sheet, pads for connecting to a semiconductor element, the pads being made of a metal material which is substantially not etched by an etchant for the metal sheet, and an insulating layer having openings exposing the pads, forming, on the insulating layer, a wiring line layer (26) connected to the pads and having pads for connecting to another wiring line layer to be subsequently formed, subsequently fabricating a multilayer circuit board body (20) by necessary numbers of insulating layers and wiring line layers alternately formed, forming, on the outermost insulating layer of the multilayer circuit board body, an insulating layer provided with through-holes exposing pads for external connecting terminals, which are located on the outermost insulating layer, then dividing the c

Abstract: A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting a semiconductor element thereon and another face for external connection terminals, the face for mounting a semiconductor device being provided with pads through which the substrate is connected to a semiconductor element to be mounted thereon, and the face for external connection terminals being provided with pads through which the substrate is connected to an external electrical circuit, wherein a reinforcing sheet is respectively joined to the face for mounting a semiconductor element thereon and the face for external connection terminals of the multilayered substrate body.

Abstract: To prevent the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a small strength. A package for semiconductor devices is formed as a laminate (20) of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole regions or some regions of the insulating resin layers (20d to 20f) of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting a semiconductor element thereon and another face for external connection terminals, the face for mounting a semiconductor device being provided with pads through which the substrate is connected to a semiconductor element to be mounted thereon, and the face for external connection terminals being provided with pads through which the substrate is connected to an external electrical circuit, wherein a reinforcing sheet is respectively joined to the face for mounting a semiconductor element thereon and the face for external connection terminals of the multilayered substrate body.

Abstract: The invention relates a method for producing a multilayer circuit board (50) for a semiconductor device, comprising using a composite metal sheet (14) in which two metal sheets are combined, forming, on each side of the composite metal sheet, pads for connecting to a semiconductor element, the pads being made of a metal material which is substantially not etched by an etchant for the metal sheet, and an insulating layer having openings exposing the pads, forming, on the insulating layer, a wiring line layer (26) connected to the pads and having pads for connecting to another wiring line layer to be subsequently formed, subsequently fabricating a multilayer circuit board body (20) by necessary numbers of insulating layers and wiring line layers alternately formed, forming, on the outermost insulating layer of the multilayer circuit board body, an insulating layer provided with through-holes exposing pads for external connecting terminals, which are located on the outermost insulating layer, then dividing the c

Abstract: A method for producing a wiring substrate provided with bumps protruding from a surface of the substrate, the method comprising the steps of: covering one side of a metallic base with an electrical insulating film and forming open holes in the insulating film so as to expose at the bottoms thereof the base, etching the base using the insulating film having the open holes formed as a mask to form concavities in the base, electroplating the interior face of each of the concavities using the base as a plating power supply layer to form a barrier metal film on the interior face of each concavities, filling the concavities with a material for the bump by electroplating using the base as a plating power supply layer, forming a barrier layer on the surface of the material for the bump filled in each of the concavities using the base as a plating power supply layer, forming a stack of a predetermined number of wiring patterns on the insulating film, the adjacent wiring patterns in the stack being separated from each

Abstract: A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting a semiconductor element thereon and another face for external connection terminals, the face for mounting a semiconductor device being provided with pads through which the substrate is connected to a semiconductor element to be mounted thereon, and the face for external connection terminals being provided with pads through which the substrate is connected to an external electrical circuit, wherein a reinforcing sheet is respectively joined to the face for mounting a semiconductor element thereon and the face for external connection terminals of the multilayered substrate body.

Abstract: A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting a semiconductor element thereon and another face for external connection terminals, the face for mounting a semiconductor device being provided with pads through which the substrate is connected to a semiconductor element to be mounted thereon, and the face for external connection terminals being provided with pads through which the substrate is connected to an external electrical circuit, wherein a reinforcing sheet is respectively joined to the face for mounting a semiconductor element thereon and the face for external connection terminals of the multilayered substrate body.