Abstract: An imaging device of the present disclosure includes: a plurality of pixel circuits that each generates a pixel signal including a pixel voltage corresponding to an amount of received light, and performs AD conversion by comparing the pixel signal with a reference signal; and a reference signal generator including a signal generation circuit and a voltage follower circuit, the signal generation circuit that generates a voltage signal having a ramp waveform, and the voltage follower circuit that performs a voltage follower operation on the basis of the voltage signal to generate the reference signal, and supplies the reference signal to the plurality of pixel circuits.

Abstract: An overlight amount detection circuit (1) according to the present disclosure includes a MOS transistor and a high-impedance element (Ca). A source of the MOS transistor (Mn1) is connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to a drain of the MOS transistor (Mn1). The overlight amount detection circuit (1) detects a potential fluctuation of the vertical signal line (VSL) based on a potential defined by a gate potential of the MOS transistor (Mn1), and outputs a potential of a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) as a signal indicating an overlight amount detection result.

Abstract: A solid-state imaging device includes a photodiode that generates a signal charge by photoelectric conversion according to received light, a floating diffusion that accumulates the signal charge generated by the photodiode, an amplification transistor that amplifies and outputs a power source voltage according to the signal charge accumulated in the floating diffusion, a dummy transistor having the same characteristics as the amplification transistor, and a negative feedback circuit that applies a negative feedback to the dummy transistor such that respective source currents of the amplification transistor and the dummy transistor are equal to each other. The respective source currents of the amplification transistor and the dummy transistor are controlled so as to coincide with each other by the negative feedback circuit.

Abstract: A solid-state imaging device includes a photodiode that generates a signal charge by photoelectric conversion according to received light, a floating diffusion that accumulates the signal charge generated by the photodiode, an amplification transistor that amplifies and outputs a power source voltage according to the signal charge accumulated in the floating diffusion, a dummy transistor having the same characteristics as the amplification transistor, and a negative feedback circuit that applies a negative feedback to the dummy transistor such that respective source currents of the amplification transistor and the dummy transistor are equal to each other. The respective source currents of the amplification transistor and the dummy transistor are controlled so as to coincide with each other by the negative feedback circuit.