Patents by Inventor Jyunsuke Tomioka

Jyunsuke Tomioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
    Patent number: 7918934
    Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.
    Type: Grant
    Filed: November 29, 2006
    Date of Patent: April 5, 2011
    Assignee: Sumco Techxiv Corporation
    Inventors: Yutaka Shiraishi, Jyunsuke Tomioka, Takuji Okumura, Tadayuki Hanamoto, Takehiro Komatsu, Shigeo Morimoto
  • Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
    Publication number: 20070068448
    Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.
    Type: Application
    Filed: November 29, 2006
    Publication date: March 29, 2007
    Applicant: Komatsu Denshi Kinzoku Kabushiki Kaisha
    Inventors: Yutaka Shiraishi, Jyunsuke Tomioka, Takuji Okumura, Tadayuki Hanamoto, Takehiro Komatsu, Shigeo Morimoto
  • Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
    Patent number: 7160386
    Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: January 9, 2007
    Assignee: Komatsu Denshi Kinzoku Kabushiki Kaisha
    Inventors: Yutaka Shiraishi, Jyunsuke Tomioka, Takuji Okumura, Tadayuki Hanamoto, Takehiro Komatsu, Shigeo Morimoto
  • Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
    Publication number: 20040211359
    Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.
    Type: Application
    Filed: February 20, 2004
    Publication date: October 28, 2004
    Inventors: Yutaka Shiraishi, Jyunsuke Tomioka, Takuji Okumura, Tadayuki Hanamoto, Takehiro Komatsu, Shigeo Morimoto