Abstract: Light emitting diodes and display systems are disclosed. In an embodiment a light emitting diode (150) includes a p-n diode (120) including a mesa structure (129) that protrudes from a base structure (131). A reflective metallization (130) laterally surrounds the mesa structure, which also includes a quantum well layer of the p-n diode.

Abstract: Light emitting diodes and display systems are disclosed. In an embodiment a light emitting diode (150) includes a p-n diode (120) including a mesa structure (129) that protrudes from a base structure (131). A reflective metallization (130) laterally surrounds the mesa structure, which also includes a quantum well layer of the p-n diode.

Abstract: An exercise system presents display programming at a rate that is commensurate to a user's exercise rate. The user's exercise rate is monitored and compared to a default exercise rate. When the user's exercise rate is above or below the default exercise rate, the presentation of the display programming is adjusted to maintain a temporal relationship between the user's exercise rate and the display programming. The presentation of the display programming can be adjusted by periodically skipping or pausing frames of the display programming to increase or decrease the duration of the display programming.

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract: LEDs and an electronic device are disclosed. In an embodiment an LED includes a p-n diode and a dielectric mirror spanning along a lateral sidewall of the p-n diode and directly underneath the p-n diode. An opening is formed in the dielectric mirror directly underneath the p-n diode, and a bottom conductive contact is on the dielectric mirror directly underneath the p-n diode and within the opening in the dielectric mirror.

Abstract: An exercise system presents display programming at a rate that is commensurate to a user's exercise rate. The user's exercise rate is monitored and compared to a default exercise rate. When the user's exercise rate is above or below the default exercise rate, the presentation of the display programming is adjusted to maintain a temporal relationship between the user's exercise rate and the display programming. The presentation of the display programming can be adjusted by periodically skipping or pausing frames of the display programming to increase or decrease the duration of the display programming.

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract: The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type GaN layer, a second GaN layer, a barrier layer, a gate, a source, and a drain. The first GaN layer is formed on the substrate, and has a stepped contour from a cross-section view. The P-type GaN layer is formed on an upper step surface of the stepped contour, and has a vertical sidewall. The second GaN layer is formed on the P-type GaN layer. The barrier layer is formed on the second GaN layer. two dimensional electron gas regions are formed at junctions between the barrier layer and the first and second GaN layers. The gate is formed on an outer side of the vertical sidewall.

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract: Disclosed is a method for achieving efficient and accurate measurement of path capacities of a communication network. The method includes the following steps: (a) transmitting a number of probes from a local node to a remote node over a forward network path, each probe contains at least one probe packet and can elicit the remote node to transmit a number of response packets to the local node over a reverse network path; (b) determine for each response packet a minimum round-trip packet delay between the time transmitting the probe and the time receiving the response packet; (c) calculate a number of pair-wise minimum delay differences from the minimum round-trip packet delays. The number of pair-wise minimum delay differences can be used as a measurement of the forward capacity, reverse capacity, faster-path capacity, slower-path capacity and a degree of capacity asymmetry between the local node and the remote node.

Abstract: The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type GaN layer, a second GaN layer, a barrier layer, a gate, a source, and a drain. The first GaN layer is formed on the substrate, and has a stepped contour from a cross-section view. The P-type GaN layer is formed on an upper step surface of the stepped contour, and has a vertical sidewall. The second GaN layer is formed on the P-type GaN layer. The barrier layer is formed on the second GaN layer. two dimensional electron gas regions are formed at junctions between the barrier layer and the first and second GaN layers. The gate is formed on an outer side of the vertical sidewall.

Abstract: A display system includes a display device and a mobile device. The display device includes a signal receiving unit for receiving program signals, a processing unit operable to convert the program signals into program contents, and to encode one of the program contents into program packets, a first output unit operable to reproduce the program contents, and a first communication unit to transmit the program packets. The mobile device includes a second communication unit for receiving the program packets, a control unit operable to decode the program packets to recover the transmitted program content, and a second output unit to reproduce the transmitted program content.

Abstract: A method for achieving fast and efficient measurement of path capacity of a communication network. The method includes the following steps: (a) transmitting a number of probes from a local endpoint to a remote endpoint over a network path and each probe contains at least two outgoing packets and each probe can elicit at least two response packets from the remote endpoint; (b) determining a first minDelay by measuring RTT between the time sending the first probe packet and the time receiving the first response packet; (c) determining a second minDelay by measuring RTT between the time sending the second probe packet and the time receiving the second response packet; and (d) determining a minimum delay difference by subtracting said first minDelay from said second minDelay. The minimum delay difference divided by packet size can be used as a measurement of the network path capacity.

Abstract: A method for achieving fast and efficient measurement of path capacity of a communication network. The method includes the following steps: (a) transmitting a number of probes from a local endpoint to a remote endpoint over a network path and each probe contains at least two outgoing packets and each probe can elicit at least two response packets from the remote endpoint; (b) determining a first minDelay by measuring RTT between the time sending the first probe packet and the time receiving the first response packet; (c) determining a second minDelay by measuring RTT between the time sending the second probe packet and the time receiving the second response packet; and (d) determining a minimum delay difference by subtracting said first minDelay from said second minDelay. The minimum delay difference divided by packet size can be used as a measurement of the network path capacity.