Abstract: A semiconductor device according to an embodiment of the present disclosure includes: a first memory cell layer including a first selection line extending in a first direction, a second selection line extending in a second direction, and a first memory cell coupled to the first selection line and the second selection line, a second memory cell layer provided above the first memory cell layer, and including a third selection line extending in the first direction, a fourth selection line extending in the second direction, and a second memory cell coupled to the third selection line and the fourth selection line; and a first wiring layer provided between the first memory cell layer and the second memory cell layer and including a first metal wiring line.