Abstract: A conductive substrate for the deposition of material thereon which comprises an insulating layer upon said substrate, and a pluralitry of aperatures in said insulating layer containing conductive material formed from said substrate forming a plurality of metallic nucleating centers for the adherence of said material to said substrate.

Abstract: Stabilization of energy sensitive semiconductor devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and related metals, followed by rinsing, drying, and the final deposition of an overlying electrode by metallization.

Abstract: Hetero-augmentation of semiconductor materials by reacting a mixture of (1) a gaseous precursor of a host semiconductor with (2) a gaseous compound of the host and a hetero atom. The host precursor is a semiconductor hydride or a mixture of hydrides, including those of silicon and germanium. The compound of the host and hetero-atom includes a silyl or germyl dopant or alloyant. Suitable dopants are phosphorous, arsenic, and nitrogen. Suitable alloyants are other semiconductors and nitrogen. The reaction can take place pyrolytically, by electrical discharge, or photochemically.