Abstract: The application relates to a method of ESD protecting high-voltage inputs of an integrated circuit fabricated in a standard CMOS IC process, the high-voltage inputs being expected to experience nominal voltage swings that are larger than the nominal maximum voltage swing of the standard CMOS IC process. The application further relates to an IC and to an article of manufacture comprising the IC and an antenna. The object of the present application is to provide an integrated circuit in a standard CMOS process that supports larger than nominal input/output swings.

Abstract: A wireless communication system includes a) a first device having a transmitter part with a Tx-antenna for transmitting an electrical signal having a signal bandwidth BWsig and b) a second device having a receiver part with an Rx-antenna for receiving the transmitted electromagnetic signal. At least one of the Tx- and Rx-antennas is a narrowband antenna having an antenna bandwidth BWant, wherein the Tx- and/or Rx-antenna bandwidths fulfil the relation BWant=k·BWsig. The system is adapted to provide that k is smaller than 1.25, and the antenna bandwidth BWant is defined as the ?3 dB bandwidth of the loaded antenna when it is connected to the communication system, and the signal bandwidth BWsig is defined as the bandwidth within which 99% of the desired signal power is located.

Abstract: The invention regards a communication device which is adapted for placement in a users ear and comprises a shell part enclosing an input transducer for receiving an input signal, a signal processing device and an output transducer for providing a signal perceivable as sound, a battery located at a surface part of the shell which is facing away from the head of the user, a transmission and reception circuit for transmission and/or reception of electromagnetic energy, and where an antenna for radiating and/or receiving electromagnetic energy is arranged with a first surface turned towards the surroundings and a second surface located in close proximity of the battery whereby the antenna forms a loop with a loop axis pointing away from the ear and head, whereby the loop material has a wider extension in the direction of the loop axis than in the direction perpendicular to the loop axis.

Abstract: A tuning circuit comprising a first reactance, a second reactance and a insulated gate field effect transistor having a gate arranged to receive a control signal. The first reactance is connected between the source of the field effect transistor and a first node. The second reactance has the same value as the first reactance and is connected between the drain of the field effect transistor and a second node. The first and second nodes are arranged so as to experience a balanced ac signal. Turning the field effect transistor on has the effect of making the first and second reactances effective in the circuit and vice versa.

Abstract: In a planar transformer, at least a portion of each of the windings are intermingled in an intermingled portion. Within the intermingled portion, each full turn of each winding is effected by one self-crossing and two crossings of each other winding having turns in said intermingled portion. The windings may be formed in the conductor layers of an integrated circuit.

Abstract: A bandpass filter is tuned by converting the filter into an oscillator using a negative resistance circuit, tuning the oscillator by using conventional tuning techniques such as tuning a varactor via a phase locked loop, sampling and holding the tuning signal and switching off the negative resistance circuit to convert the oscillator back into a bandpass filter.

Abstract: A tuning circuit comprising a first reactance, a second reactance and a insulated gate field effect transistor having a gate arranged to receive a control signal. The first reactance is connected between the source of the field effect transistor and a first node. The second reactance has the same value as the first reactance and is connected between the drain of the field effect transistor and a second node. The first and second nodes are arranged so as to experience a balanced ac signal. Turning the field effect transistor on has the effect of making the first and second reactances effective in the circuit and vice versa.

Abstract: A tuning circuit comprising a first reactance, a second reactance and a insulated gate field effect transistor having a gate arranged to receive a control signal. The first reactance is connected between the source of the field effect transistor and a first node. The second reactance has the same value as the first reactance and is connected between the drain of the field effect transistor and a second node. The first and second nodes are arranged so as to experience a balanced ac signal. Turning the field effect transistor on has the effect of making the first and second reactances effective in the circuit and vice versa.

Abstract: In a planar transformer, at least a portion of each of the windings are intermingled in an intermingled portion. Within the intermingled portion, each full turn of each winding is effected by one self-crossing and two crossings of each other winding having turns in said intermingled portion. The windings may be formed in the conductor layers of an integrated circuit.

Abstract: A bandpass filter is tuned by converting the filter into an oscillator using a negative resistance circuit, tuning the oscillator by using conventional tuning techniques such as tuning a varactor via a phase locked loop, sampling and holding the tuning signal and switching off the negative resistance circuit to convert the oscillator back into a bandpass filter.

Abstract: A tuning circuit comprising a first reactance, a second reactance and a insulated gate field effect transistor having a gate arranged to receive a control signal. The first reactance is connected between the source of the field effect transistor and a first node. The second reactance has the same value as the first reactance and is connected between the drain of the field effect transistor and a second node. The first and second nodes are arranged so as to experience a balanced ac signal. Turning the field effect transistor on has the effect of making the first and second reactances effective in the circuit and vice versa.