Abstract: A semiconductor device includes a junction field effect transistor (JFET) on a silicon-on-insulator (SOI) substrate. The JFET includes a gate with a first gate segment contacting the channel on a first lateral side of the channel, and a second gate segment contacting the channel on a second, opposite, lateral side of the channel. The first gate segment and the second gate segment extend deeper in the semiconductor layer than the channel. The JFET further includes a drift region contacting the channel, and may include a buried layer having the same conductivity type as the channel, extending at least partway under the drift region.

Abstract: A semiconductor device includes a Silicon-on-Insulator (SOI) substrate including a top device layer, a buried oxide (BOX) layer, and a bottom handle portion. A filled trench is lined with a trench dielectric layer that extends to at least the BOX layer, defining an inner and an outer portion of the device layer. A field effect transistor (FET) includes an inner portion, a source region having a source contact thereto and a drain region having a drain contact thereto, each doped a first doping type. A gate region has a gate contact that is separated from the inner portion by the trench dielectric. The source and drain region are separated by a body region doped a second doping type having a body contact.

Abstract: A semiconductor device includes a junction field effect transistor (JFET) on a silicon-on-insulator (SOI) substrate. The JFET includes a gate with a first gate segment contacting the channel on a first lateral side of the channel, and a second gate segment contacting the channel on a second, opposite, lateral side of the channel. The first gate segment and the second gate segment extend deeper in the semiconductor layer than the channel. The JFET further includes a drift region contacting the channel, and may include a buried layer having the same conductivity type as the channel, extending at least partway under the drift region.

Abstract: A semiconductor device includes a Silicon-on-Insulator (SOI) substrate including a top device layer, a buried oxide (BOX) layer, and a bottom handle portion. A filled trench is lined with a trench dielectric layer that extends to at least the BOX layer, defining an inner and an outer portion of the device layer. A field effect transistor (FET) includes an inner portion, a source region having a source contact thereto and a drain region having a drain contact thereto, each doped a first doping type. A gate region has a gate contact that is separated from the inner portion by the trench dielectric. The source and drain region are separated by a body region doped a second doping type having a body contact.

Abstract: An electric toothbrush (10, 100) is disclosed as including an electric motor (22, 122), a shaft (56, 156) engaged with a brush head (18), and a coupling mechanism operatively associated with the motor (22, 122) and the shaft (56, 156) for coupling with the motor (22, 122) to drive the shaft (56, 156) to swivel about a longitudinal axis of the shaft (56, 156), the coupling mechanism including a reciprocating block (34, 134) reciprocable along a straight line perpendicular to the longitudinal axis of the shaft (56, 156).

Abstract: An electric toothbrush (10) is disclosed as including an electric motor (22), a shaft (56) engaged with a brush head (18), and a coupling mechanism operatively associated with the motor (22) and the shaft (56) for transmitting the motional output of the motor (22) to drive the shaft (56) to swivel about its longitudinal axis, the coupling mechanism including a reciprocating block (34) reciprocable along a straight line perpendicular to the longitudinal axis of the shaft (56).

Abstract: Novel optical modulators and other high performance Faraday-Stark magneto-optoelectronic devices (MOE's) are disclosed that allow electrical adjusting of the polarization (or other optical properties) of an excitation light at high modulation bandwidth and deep modulation depths through the Faraday-Stark effect. The high performance Faraday-Stark magneto-optoelectronic devices of the present invention include a Faraday-Stark cell having at least one quantum well formed in a semiconductor or other material defining transition energies and wavefunction overlaps that correspond to the presence and/or magnitude of magnetic and electric fields that may be present to the quantum wells of the cell.